NXH240B120H3Q1P1G Series

Si/SiC Hybrid Power Integrated Module (PIM), 3-channel Boost

Catalog

Si/SiC Hybrid Power Integrated Module (PIM), 3-channel Boost

Part	Current - Collector Cutoff (Max) [Max]	Package / Case	Input	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Input Capacitance (Cies) @ Vce	IGBT Type	Configuration	NTC Thermistor	Mounting Type
ON Semiconductor NXH240B120H3Q1P1G	150 µA	Module	Standard	150 °C	-40 °C	1200 V	266 W	92 A	32-PIM (71x37.4)	2.7 V	19082 pF	Trench Field Stop	Three Level Inverter		Chassis Mount

Catalog

Si/SiC Hybrid Power Integrated Module (PIM), 3-channel Boost

Key Features

• 1200V SiC Diodes

• Low Vf bypass diodes

• Solder and press-fit options

Description

The NXH240B120H3Q1P1G is a 3-channel 1200 V IGBT + SiC Boost module. Each channel consists of a fast switching 80 A IGBT, a 30 A SiC diode, a bypass diode and an IGBT protection diode. The module contains an NTC thermistor.