NXH200T120H3Q2 Series

Si/SiC Hybrid Module, Split T-Type NPC inverter

Catalog

Si/SiC Hybrid Module, Split T-Type NPC inverter

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Input Capacitance (Cies) @ Vce	Operating Temperature [Min]	Operating Temperature [Max]	IGBT Type	Package / Case	Vce(on) (Max) @ Vge, Ic	NTC Thermistor	Current - Collector (Ic) (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Input	Configuration	Supplier Device Package [y]	Supplier Device Package [x]	Supplier Device Package
ON Semiconductor NXH200T120H3Q2F2SG	1200 V	679 W	35.615 nF	-40 C	175 °C	Trench Field Stop	Module	2.3 V		330 A	Chassis Mount	500 çA	Standard	Half Bridge	47	93	56-PIM/Q2PACK
ON Semiconductor NXH200T120H3Q2F2STG	1200 V	679 W	35.615 nF	-40 C	175 °C	Trench Field Stop	Module	2.3 V		330 A	Chassis Mount	500 çA	Standard	Half Bridge	47	93	56-PIM/Q2PACK

Catalog

Si/SiC Hybrid Module, Split T-Type NPC inverter

Key Features

• Low VCE(sat) fast switching IGBTs combined with SiC diodes in neutral point

• Low thermal resistance baseplate

• Solder pins

Description

The NXH200T120H3Q2 is a power integrated module (PIM) containing a split T-type neutral point clamped three-level inverter, consisting of two 200A/1200V half-bridge IGBTs with inverse diodes, two neutral point 100A/650V SiC diodes, two 150A/650V neutral point IGBTs with inverse diodes, two half-bridge 150A/1200V rectifiers and a negative temperature coefficient thermistor (NTC).