NXH030P120M3F1PTG Series

Silicon Carbide (SiC) Module – EliteSiC, 30 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

Catalog

Silicon Carbide (SiC) Module – EliteSiC, 30 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

Part
ON Semiconductor NXH030P120M3F1PTG

Catalog

Silicon Carbide (SiC) Module – EliteSiC, 30 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

Key Features

• Excellent FOM [ = Rdson * Eoss ]

• 15V to 18V Gate Drive

• 30 mohm / 1200 V M3S SiC MOSFET Half−Bridge

• These Devices are Pb−Free, Halide Free and are RoHS Compliant

Description

The NXH030P120M3F1PTG is a power module containing 30 mohm / 1200 V SiC MOSFET half−bridge and a thermistor with Alumina (AL2O3) DBC in an F1 package. The SiC MOSFET switches use M3S technology and are driven with 18V-20V gate drive.