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ON Semiconductor

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(10272)

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Part	Category	Description
ON Semiconductor NCV8402AMNWT1G	Integrated Circuits (ICs)	SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL
ON Semiconductor 74AC32PCObsolete	Integrated Circuits (ICs)	IC GATE OR 4CH 2-INP 14MDIP
ON Semiconductor FGI3236-F085	Discrete Semiconductor Products	IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION
ON Semiconductor FAN1655MTFXObsolete	Integrated Circuits (ICs)	IC REG CTRLR DDR 1OUT 16TSSOP
ON Semiconductor FIN1027MObsolete	Integrated Circuits (ICs)	LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC
ON Semiconductor TMC2111AR3C	Integrated Circuits (ICs)	PIPELINE REGISTER, 8-BIT PQCC28
ON Semiconductor SLV4HC4053ADWRGObsolete	Integrated Circuits (ICs)	LDO REGULATOR, ULTRA-LOW NOISE,
ON Semiconductor FOD4218V	Isolators	OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES
ON Semiconductor NVMFD5483NLT1GObsolete	Discrete Semiconductor Products	DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ
ON Semiconductor 2SD1804S-TL-E	Discrete Semiconductor Products	BIP NPN 8A 50V

Series	Category	# Parts	Status	Description

NXH35	IGBTs	1	Obsolete
NXH350N100H4Q2SiC Hybrid Module, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode	Discrete Semiconductor Products	1	Obsolete	The NXH350N100H4Q2 is a power integrated module (PIM) containing a single I-type NPC stage containing 100 A, 1200 V SiC diodes for the neutral point clamps, 350 A, 1000 V IGBTs for the outer IGBTs and 300 A, 1000 V IGBTs for the inner IGBTs. The inverse diodes for the IGBTs are specified at 170 A for switching. An on-board thermistor is included.
NXH40B120MNQ0Full SiC MOSFET Module \| EliteSiC Two Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode	IGBT Modules	1	Active	The NXH40B120MNQ0 is a EliteSiC power integrated module (PIM) containing a dual full SiC boost stage consisting of two 40mohm/1200V SiC MOSFETs and two 40A/1200V SiC diodes. Two additional 50A/1200V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.
NXH40B120MNQ1Full SiC MOSFET Module \| EliteSiC Three Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode	IGBTs	1	Active	The NXH40B120MNQ1 is a EliteSiC power integrated module (PIM) containing a dual full SiC boost stage consisting of three 40mohm/1200V SiC MOSFETs and three 40A/1200V SiC diodes. Three additional 50A/1200V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.
NXH40T120L3Q1Power Integrated Module (PIM), 3-channel T-Type NPC 1200 V, 40 A IGBT, 650 V, 25 A IGBT	Discrete Semiconductor Products	2	Active	The NXH40T120L3Q1PG/SG is a case power module containing a three channel T-type neutral-point clamped (TNPC) circuit. Each channel has a two 1200 V, 40 A IGBTs with inverse diodes and two 650 V, 25 A IGBTs with inverse diodes. The module contains an NTC thermistor
NXH450B100H4Q2Si/SiC Hybrid Modules, 3 Channel Symmetric Boost 1000 V, 150 A IGBT, 1200 V, 30 A SiC Diode	Transistors	1	Active	The NXH450B100H4Q2 is a three channel symmetric boost module. Each channel contains two 1000 V, 150 A IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass diodes. The module contains an NTC thermistor.
NXH50	IGBT Modules	1	Obsolete
NXH50M65L4Q1IGBT Module, H6.5 Topology, 650 V, 50 A IGBT, 650 V, 50 A Diode	IGBTs	2	Active	The NXH50M65L4Q1 is an IGBT module with H6.5 topology in a Q1 package. The module contains six 50 A, 650 V IGBTs, five 50 A, 650V Stealth diodes and a thermistor.
NXH600	Discrete Semiconductor Products	1	Active
NXH600B100H4Q2F2Si/SiC Hybrid Modules, 3 Channel Symmetric Boost 1000 V, 200 A IGBT, 1200 V, 60 A SiC Diode	Transistors	1	Active	The NXH600B100H4Q2 is a three channel symmetric boost module. Each channel contains two 1000 V, 200 A IGBTs and two 1200 V, 60 A SiC diodes. The module contains an NTC thermistor.