NXH240B120H3Q1 Series

Power Integrated Module (PIM) 3-channel 1200 V IGBT + SiC Boost, 80 A IGBT and 20 A SiC diode

Catalog

Power Integrated Module (PIM) 3-channel 1200 V IGBT + SiC Boost, 80 A IGBT and 20 A SiC diode

Part	Current - Collector (Ic) (Max) [Max]	IGBT Type	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Input Capacitance (Cies) @ Vce	Package / Case	NTC Thermistor	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Input	Configuration	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type
ON Semiconductor NXH240B120H3Q1PG	68 A	Trench Field Stop	2 V	1200 V	18.151 nF	Module		400 µA	32-PIM (71x37.4)	Standard	Dual Triple	158 W	150 °C	-40 °C	Chassis Mount

Catalog

Power Integrated Module (PIM) 3-channel 1200 V IGBT + SiC Boost, 80 A IGBT and 20 A SiC diode

Key Features

• 1200 V Fast Switching IGBTs

• 1200 SiC Diodes

• Low Vf bypass diodes

• Press-fit pins

Description

The NXH240B120H3Q1PG is a 3-channel 1200 V IGBT + SiC Boost module. Each channel consists of a fast switching 80 A IGBT, a 20 A SiC diode, a bypass diode and an IGBT protection diode. The module contains an NTC thermistor.