NXH160T120L2Q2F2SG Series

Power Integrated Module (PIM), IGBT 1200 V, 160 A and 600 V, 100 A

Catalog

Power Integrated Module (PIM), IGBT 1200 V, 160 A and 600 V, 100 A

Part
ON Semiconductor NXH160T120L2Q2F2SG

Catalog

Power Integrated Module (PIM), IGBT 1200 V, 160 A and 600 V, 100 A

Key Features

• 600 V IGBT specifications: VCE(SAT) = 1.47 V, ESW = 2560 uJ

• 1200 V IGBT Specifications: VCE(SAT) = 2.15 V, ESW = 4300 uJ

• Baseplate

• Solderable Pins

• Thermistor

• T−type Neutral Point Clamped Three−level Inverter Module

Description

The NXH160T120L2Q2F2SG is a power integrated module (PIM) containing a split T-type neutral point clamped three-level inverter, consisting of two 160A/1200V half-bridge IGBTs with inverse diodes, two neutral point 120A/1200V rectifiers, two 100A/600V neutral point IGBTs with inverse diodes, two half-bridge 60A/600V rectifiers and a negative temperature coefficient thermistor (NTC).