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ON Semiconductor
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NTH4L015N065SC1Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, TO-247-4L | Discrete Semiconductor Products | 1 | Active | Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. |
NTH4L020N120SC1Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L | Discrete Semiconductor Products | 1 | Active | Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. |
NTH4L023N065M3SSilicon Carbide (SiC) MOSFET – EliteSiC, 23 mohm, 650 V, M3S, TO-247-4L | FETs, MOSFETs | 1 | Active | The new family of 650V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive. |
NTH4L027N65S3FPower MOSFET, N-Channel, SUPERFET<sup>®</sup> III, FRFET<sup>®</sup>, 650 V, 75 A, 27.4 mΩ, TO-247 4lead | Discrete Semiconductor Products | 1 | Active | SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III MOSFET is very suitable for thevarious power systems for miniaturization and higher efficiency.SUPERFET III FRFET MOSFET’s optimized reverse recoveryperformance of body diode can remove additional component andimprove system reliability. |
NTH4L028N170M1Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L | Single FETs, MOSFETs | 1 | Active | Silicon Carbide (SiC) MOSFET new family, 1700V M1 planar EliteSiC MOSFET is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This EliteSiC family delivers optimum performance when driven with 20V gate drive but also works well with 18V gate drive. |
NTH4L040N120SC1Power MOSFET, N-Channel, SUPERFET<sup>®</sup> III, FRFET<sup>®</sup>, 650 V, 65 A, 40 mΩ, TO-247 4lead | FETs, MOSFETs | 2 | Active | SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III MOSFET is very suitable for thevarious power systems for miniaturization and higher efficiency.SUPERFET III FRFET MOSFET’s optimized reverse recoveryperformance of body diode can remove additional component andimprove system reliability. |
NTH4L060N090SC1Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, TO-247-4L | FETs, MOSFETs | 1 | Active | Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. |
NTH4L080N120SC1Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L | Transistors | 1 | Active | Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. |
NTH4L095N065SC1Silicon Carbide (SiC) MOSFET - EliteSiC, 70 mohm, 650 V, M2, TO-247-4L | Transistors | 1 | Active | Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. |
NTH4L160N120SC1Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L | FETs, MOSFETs | 1 | Active | Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. |
| Part | Category | Description |
|---|---|---|
 ON Semiconductor | Integrated Circuits (ICs) | SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL |
 ON Semiconductor 74AC32PCObsolete | Integrated Circuits (ICs) | IC GATE OR 4CH 2-INP 14MDIP |
 ON Semiconductor | Discrete Semiconductor Products | IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION |
 ON Semiconductor FAN1655MTFXObsolete | Integrated Circuits (ICs) | IC REG CTRLR DDR 1OUT 16TSSOP |
 ON Semiconductor FIN1027MObsolete | Integrated Circuits (ICs) | LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC |
 ON Semiconductor | Integrated Circuits (ICs) | PIPELINE REGISTER, 8-BIT PQCC28 |
ON Semiconductor SLV4HC4053ADWRGObsolete | Integrated Circuits (ICs) | LDO REGULATOR, ULTRA-LOW NOISE, |
 ON Semiconductor | Isolators | OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES |
 ON Semiconductor NVMFD5483NLT1GObsolete | Discrete Semiconductor Products | DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ |
ON Semiconductor | Discrete Semiconductor Products | BIP NPN 8A 50V |