NTH4L080N120SC1 Series

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Min]	Vgs (Max) [Max]
ON Semiconductor NTH4L080N120SC1	TO-247-4L	56 nC	1200 V	TO-247-4	-55 °C	175 ░C	4.3 V	Through Hole	110 mOhm	1670 pF	N-Channel	170 W	29 A	-15 V	25 V

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L

Key Features

• 1200V

• High Junction Temperature

• High UIS, Surge Current, and Avalanche

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.