NTH4L020N120SC1 Series

Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L

Part	Power Dissipation (Max)	Supplier Device Package	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max) [Min]	Vgs (Max) [Max]	Drain to Source Voltage (Vdss)
ON Semiconductor NTH4L020N120SC1	510 W	TO-247-4L	N-Channel	-55 °C	175 ░C	102 A	28 mOhm	Through Hole	TO-247-4	2943 pF	4.3 V	220 nC	-15 V	25 V	1200 V

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L

Key Features

• Max RDS(on) = 28mΩ at Vgs = 20V, Id = 60A

• High Speed Switching and Low Capacitance

• 100% UIL Tested

• 1200V Rated

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.