NTH4L028N170M1 Series

Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L

Part	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Power Dissipation (Max) [Max]	Vgs (Max) [Min]	Vgs (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor NTH4L028N170M1	40 mOhm	N-Channel	Through Hole	535 W	-15 V	25 V	-55 °C	175 ░C	TO-247-4	4230 pF	4.3 V	TO-247-4L	1700 V	200 nC

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L

Key Features

• TO247-4LD package for low common source inductance

• 18V to 20V Gate Drive

• New 1700V M1 technology: 28mohm RDS(ON)with low EONand EOFFlosses

• 100% Avalanche Tested

Description

Silicon Carbide (SiC) MOSFET new family, 1700V M1 planar EliteSiC MOSFET is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This EliteSiC family delivers optimum performance when driven with 20V gate drive but also works well with 18V gate drive.