NTH4L160N120SC1 Series

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L

Part	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Power Dissipation (Max)	FET Type	Package / Case	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max) [Min]	Vgs (Max) [Max]	Drain to Source Voltage (Vdss)
ON Semiconductor NTH4L160N120SC1	34 nC	224 mOhm	665 pF	4.3 V	111 W	N-Channel	TO-247-4	Through Hole	TO-247-4L	-55 °C	175 ░C	-15 V	25 V	1200 V

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-4L

Key Features

• High Junction Temperature

• 1200V

• High UIS, Surge Current, and Avalanche

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.