NTH4L040N120SC1 Series

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 65 A, 40 mΩ, TO-247 4lead

Catalog

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 65 A, 40 mΩ, TO-247 4lead

Part	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max) [Min]	Vgs (Max) [Max]
ON Semiconductor NTH4L040N65S3F	TO-247-4	40 mOhm	TO-247-4L	650 V	65 A	10 V	5 V	30 V	MOSFET (Metal Oxide)	5940 pF	N-Channel	-55 °C	150 °C	Through Hole	158 nC	446 W
ON Semiconductor NTH4L040N120SC1	TO-247-4	56 mOhm	TO-247-4L	1200 V	58 A		4.3 V				N-Channel	-55 °C	175 ░C	Through Hole	106 nC	319 W	1762 pF	-15 V	25 V

Catalog

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 65 A, 40 mΩ, TO-247 4lead

Key Features

• 700 V @ TJ = 150oC

• Ultra Low Gate Charge (Typ. Qg= 158 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 1366 pF)

• Excellent body diode performance (low Qrr, robust body diode)

• Optimized Capacitance

• Kelvin contact

• RoHS Compliant

• Typ. RDS(on)= 32 mΩ

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III MOSFET is very suitable for thevarious power systems for miniaturization and higher efficiency.SUPERFET III FRFET MOSFET’s optimized reverse recoveryperformance of body diode can remove additional component andimprove system reliability.