NTH4L095N065SC1 Series

Silicon Carbide (SiC) MOSFET - EliteSiC, 70 mohm, 650 V, M2, TO-247-4L

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 70 mohm, 650 V, M2, TO-247-4L

Part
ON Semiconductor NTH4L095N065SC1

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 70 mohm, 650 V, M2, TO-247-4L

Key Features

• TJ = 175°C

• Ultra Low Gate Charge (Typ. Qg = 50 nC)

• High Speed Switching with Low Capacitance (Coss = 89 pF)

• Zero reverse recovery current of body diode

• Kelvin Source configuration

• Typ. RDS(on)= 70 mΩ at Vgs = 18V

• 100% UIL Tested

• RoHS Compliant

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.