NTH4L027N65S3F Series

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 75 A, 27.4 mΩ, TO-247 4lead

Catalog

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 75 A, 27.4 mΩ, TO-247 4lead

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	FET Type	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)
ON Semiconductor NTH4L027N65S3F	595 W	7690 pF	TO-247-4L	650 V	-55 °C	150 °C	TO-247-4	10 V	Through Hole	75 A	MOSFET (Metal Oxide)	N-Channel	5 V	27.4 mOhm	30 V

Catalog

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 75 A, 27.4 mΩ, TO-247 4lead

Key Features

• 700 V @ TJ= 150 °C

• Ultra Low Gate Charge (Typ. Qg= 259 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.)= 1972 pF)

• Excellent body diode performance (low Qrr, robust body diode)

• Optimized Capacitance

• Kelvin contact

• RoHS Compliant

• 100% Avalanche Tested

• Typ. RDS(on)= 23 mΩ

Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate.Consequently, SUPERFET III MOSFET is very suitable for thevarious power systems for miniaturization and higher efficiency.SUPERFET III FRFET MOSFET’s optimized reverse recoveryperformance of body diode can remove additional component andimprove system reliability.