NTH4L060N090SC1 Series

Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, TO-247-4L

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, TO-247-4L

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]
ON Semiconductor NTH4L060N090SC1	43 mOhm	87 nC	N-Channel	46 A	15 V 18 V	TO-247-4	900 V	Through Hole	TO-247-4L	4.3 V	1770 pF	-55 °C	175 ░C	221 W

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, TO-247-4L

Key Features

• High Junction Temperature

• 900V Rating

• 100% UIL Tested

• RoHS Compliant

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.