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Nexperia USA Inc.
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
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| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
 Nexperia USA Inc. | Discrete Semiconductor Products | TRANSISTOR GP BJT NPN 50V 3A 3-PIN SOT-89 T/R |
Nexperia USA Inc. | Discrete Semiconductor Products | PDTD143XT-Q/SOT23/TO-236AB |
Nexperia USA Inc. BAV99/DG/B3,235Obsolete | Discrete Semiconductor Products | DIODE ARRAY GEN PURP 100V 215MA |
 Nexperia USA Inc. | Integrated Circuits (ICs) | 74HCS21PW-Q100/SOT402/TSSOP14 |
 Nexperia USA Inc. | Discrete Semiconductor Products | SMALL SIGNAL MOSFET FOR MOBILE |
 Nexperia USA Inc. LD6836TD/13P,125Obsolete | Integrated Circuits (ICs) | IC REG LINEAR 1.3V 300MA 5-TSOP |
 Nexperia USA Inc. 74HC688PW,112Obsolete | Integrated Circuits (ICs) | IC ID COMPARATOR 8BIT 20-TSSOP |
 Nexperia USA Inc. | Discrete Semiconductor Products | DIODE ZENER 6.2V 400MW SOD323 |
 Nexperia USA Inc. | Discrete Semiconductor Products | SMALL SIGNAL MOSFETS FOR AUTOMOT |
 Nexperia USA Inc. 74ALVT16373DGG,512Obsolete | Integrated Circuits (ICs) | IC D-TYPE TRANSP 8:8 48-TSSOP |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Single FETs, MOSFETs | 1 | Obsolete | ||
PSMN4R2-30MLDN-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Transistors | 1 | Active | Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. |
PSMN4R2-40VSHDual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) | FETs, MOSFETs | 1 | Active | Dual, standard level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using NextpowerS3 technology. |
PSMN4R2-80YSEN-channel 80 V, 4.2 mOhm MOSFET with enhanced SOA in LFPAK56E | FETs, MOSFETs | 1 | Active | N-channel enhancement mode MOSFET in a LFPAK56E package qualified to 175 °C. Part of Nexperia's "ASFETs for hotswap" portfolio, the PSMN4R2-80YSE delivers very low RDSonand a very strong linear-mode (SOA) performance in a high-reliability copper-clip LFPAK56E package. |
PSMN4R3N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology | Transistors | 6 | Active | 95 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. |
PSMN4R4N-channel 30 V 4.65 mΩ logic level MOSFET in LFPAK33 using NextPower Technology | FETs, MOSFETs | 3 | Active | Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. |
PSMN4R5N-channel 30 V, 4.8 mΩ logic level MOSFET in LFPAK using NextPower technology | Single | 4 | Active | Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. |
| Single FETs, MOSFETs | 1 | Active | ||
PSMN4R8N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK | Single | 2 | Active | Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's "NextPower Live" portfolio, the PSMN4R8-100BSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn on, whilst offering a low RDS(on)characteristic to keep temperatures down and efficiency up in continued use. Ideal for telecommunication systems based on a 48 V backplane / supply rail. |
PSMN4R8-100YSEN-channel 100 V, 4.8 mOhm MOSFET with enhanced SOA in LFPAK56E | FETs, MOSFETs | 1 | Active | N-channel enhancement mode MOSFET in a LFPAK56E package qualified to 175 °C. Part of Nexperia's "ASFETs for hotswap" portfolio, the PSMN4R8-100YSE delivers very low RDSonand a very strong linear-mode (SOA) performance in a high-reliability copper-clip LFPAK56E package. PSMN4R8-100YSE complements the latest "hot-swap" controllers ‒ robust enough to withstand substantial inrush currents during turn-on, low RDSonto minimize I2R losses delivering optimum efficiency when turned fully ON and an 80% smaller footprint than existing D2PAK types. |
