PSMN4R3 Series

Catalog

MOSFET N-CH 40V 95A LFPAK33

Part	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id [Max]	Rds On (Max) @ Id, Vgs
Freescale Semiconductor - NXP PSMN4R3-40MSHX	Surface Mount	3.6 V	20 V	MOSFET (Metal Oxide)	32 nC	90 W	LFPAK33	10 V	N-Channel	95 A	2338 pF	40 V	-55 °C	175 ░C
Freescale Semiconductor - NXP PSMN4R3-80PS,127	Through Hole		20 V	MOSFET (Metal Oxide)			TO-220AB	10 V	N-Channel	120 A	8161 pF	80 V	-55 °C	175 ░C	TO-220-3	111 nC	306 W
Freescale Semiconductor - NXP PSMN4R3-40MLHX	Surface Mount		20 V	MOSFET (Metal Oxide)	43 nC	90 W	LFPAK33	4.5 V 10 V	N-Channel	95 A		40 V	-55 °C	175 ░C				2.15 V
Freescale Semiconductor - NXP PSMN4R3-30BL,118	Surface Mount		20 V	MOSFET (Metal Oxide)		103 W	D2PAK	4.5 V 10 V	N-Channel	100 A	2400 pF	30 V	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	41.5 nC		2.15 V	4.1 mOhm
Freescale Semiconductor - NXP PSMN4R3-30PL,127	Through Hole		20 V	MOSFET (Metal Oxide)		103 W	TO-220AB	4.5 V 10 V	N-Channel	100 A	2400 pF	30 V	-55 °C	175 ░C	TO-220-3	41.5 nC		2.15 V	4.3 mOhm
Freescale Semiconductor - NXP PSMN4R3-100PS,127	Through Hole		20 V	MOSFET (Metal Oxide)	170 nC	338 W	TO-220AB	10 V	N-Channel	120 A	9900 pF	100 V	-55 °C	175 ░C	TO-220-3