| Discrete Semiconductor Products | 1 | Active | Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. |
PSMN3R5N-channel 40 V, 3.5 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Single FETs, MOSFETs | 4 | Active | 120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. |
PSMN3R5-40YSBN-channel 40 V, 3.5 mOhm, 120 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Discrete Semiconductor Products | 1 | Active | 120 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications. |
PSMN3R5-80YSFNextPower 80 V, 3.5 mOhm, 150 A, N-channel MOSFET in LFPAK56E package | Single FETs, MOSFETs | 1 | Active | NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. |
| Transistors | 1 | Active | |
| Transistors | 1 | Active | |
PSMN3R9N-channel 25 V 4.15 mΩ logic level MOSFET in LFPAK33 using NextPower Technology | Single | 3 | Active | Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. |
PSMN4R0N-channel 30 V, 4.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Transistors | 5 | Active | Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia's unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. |
| FETs, MOSFETs | 1 | Active | |
PSMN4R1-60YLN-channel 60 V, 4.1 mΩ logic level MOSFET in LFPAK56 | Discrete Semiconductor Products | 1 | Active | Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. |
