PSMN2R9-100SSEN-channel 100 V, 2.9 mOhm MOSFET with enhanced SOA in LFPAK88 | FETs, MOSFETs | 1 | Active | N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN2R9-100SSE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip LFPAK88 package. |
PSMN3R0N-channel 30 V, 3.15mΩ logic level MOSFET in LFPAK33 using NextPower Technology | Single FETs, MOSFETs | 2 | Active | Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. |
| Single FETs, MOSFETs | 1 | NRND | N-channel 30 V 3 mΩ logic level MOSFET in LFPAK |
PSMN3R0-30YLDN-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Transistors | 1 | Active | Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia's unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. |
PSMN3R2-40YLBN-channel 40 V, 3.3 mOhm, 120 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Transistors | 1 | Active | 120 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications. |
PSMN3R2-40YLDN-channel 40 V, 3.3 mΩ, 120 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | FETs, MOSFETs | 1 | Active | 120 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. |
PSMN3R3N-channel 40 V, 3.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology | Single | 4 | Active | 118 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. |
PSMN3R3-40YSN-channel LFPAK 40 V 3.3 mΩ standard level MOSFET | FETs, MOSFETs | 1 | NRND | N-channel LFPAK 40 V 3.3 mΩ standard level MOSFET |
PSMN3R3-80YSFNextPower 80 V, 3.1 mOhm, 160 A, N-channel MOSFET in LFPAK56 package | Single FETs, MOSFETs | 1 | Active | NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. |
| Single FETs, MOSFETs | 2 | Obsolete | |
