PSMN4R2-80YSE Series

N-channel 80 V, 4.2 mOhm MOSFET with enhanced SOA in LFPAK56E

Catalog

N-channel 80 V, 4.2 mOhm MOSFET with enhanced SOA in LFPAK56E

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]
Nexperia USA Inc. PSMN4R2-80YSEX	10 V	80 V	170 A	4.2 mOhm	SOT-1023 4-LFPAK	LFPAK56 Power-SO8	294 W	Surface Mount	3.6 V	8000 pF	MOSFET (Metal Oxide)	110 nC	N-Channel	20 V	175 °C	-55 °C

Catalog

N-channel 80 V, 4.2 mOhm MOSFET with enhanced SOA in LFPAK56E

Description

N-channel enhancement mode MOSFET in a LFPAK56E package qualified to 175 °C. Part of Nexperia's "ASFETs for hotswap" portfolio, the PSMN4R2-80YSE delivers very low RDSonand a very strong linear-mode (SOA) performance in a high-reliability copper-clip LFPAK56E package.