PSMN4R8-100YSE Series

N-channel 100 V, 4.8 mOhm MOSFET with enhanced SOA in LFPAK56E

Catalog

N-channel 100 V, 4.8 mOhm MOSFET with enhanced SOA in LFPAK56E

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max)	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)
Nexperia USA Inc. PSMN4R8-100YSEX	8290 pF	175 °C	-55 °C	4.8 mOhm	SOT-1023 4-LFPAK	294 W	Surface Mount	N-Channel	100 V	MOSFET (Metal Oxide)	20 V	120 A	120 nC	3.6 V	LFPAK56 Power-SO8	10 V

Catalog

N-channel 100 V, 4.8 mOhm MOSFET with enhanced SOA in LFPAK56E

Description

N-channel enhancement mode MOSFET in a LFPAK56E package qualified to 175 °C. Part of Nexperia's "ASFETs for hotswap" portfolio, the PSMN4R8-100YSE delivers very low RDSonand a very strong linear-mode (SOA) performance in a high-reliability copper-clip LFPAK56E package. PSMN4R8-100YSE complements the latest "hot-swap" controllers ‒ robust enough to withstand substantial inrush currents during turn-on, low RDSonto minimize I2R losses delivering optimum efficiency when turned fully ON and an 80% smaller footprint than existing D2PAK types.