PSMN4R8 Series

N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK

Catalog

N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK

Part	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Technology	Drain to Source Voltage (Vdss)	Vgs (Max)
Nexperia USA Inc. PSMN4R8-100PSEQ	Through Hole	175 °C	-55 °C	14400 pF	10 V	120 A	N-Channel	5 mOhm	TO-220AB	TO-220-3	MOSFET (Metal Oxide)	100 V	20 V
Nexperia USA Inc. PSMN4R8-100BSEJ	Surface Mount	175 °C	-55 °C	14400 pF	10 V	120 A	N-Channel	4.8 mOhm	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	100 V	20 V

Catalog

N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK

Description

Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's "NextPower Live" portfolio, the PSMN4R8-100BSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn on, whilst offering a low RDS(on)characteristic to keep temperatures down and efficiency up in continued use. Ideal for telecommunication systems based on a 48 V backplane / supply rail.