PSMN5R0N-channel 40 V, 5 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology | Single FETs, MOSFETs | 5 | Active | 85 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high efficiency applications at high switching frequencies. |
PSMN5R0-80BSN-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK | FETs, MOSFETs | 1 | Obsolete | Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. |
PSMN5R2-60YLN-channel 60 V, 5.2 mΩ logic level MOSFET in LFPAK56 | Discrete Semiconductor Products | 1 | Active | Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. |
PSMN5R3-25MLDN-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Discrete Semiconductor Products | 1 | Active | Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. |
PSMN5R5-100YSFNextPower 100 V, 5.6 mOhm N-channel MOSFET in LFPAK56 package | Transistors | 1 | Active | NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. |
| Discrete Semiconductor Products | 1 | Active | Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. |
PSMN5R6N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK | Transistors | 2 | Active | Standard level N-channel MOSFET in a SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. |
PSMN5R6-60YLN-channel 60 V, 5.6 mΩ logic level MOSFET in LFPAK56 | Single FETs, MOSFETs | 1 | Active | Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. |
| FETs, MOSFETs | 1 | Active | |
PSMN6R0N-channel 30 V, 6.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Single FETs, MOSFETs | 5 | Active | Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. |
