PSMN4R5 Series
Manufacturer: Freescale Semiconductor - NXP
NEXTPOWER 80/100V MOSFETS
| Part | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Mounting Type | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Supplier Device Package | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Freescale Semiconductor - NXP | 6009 pF | SC-100 SOT-669 | Surface Mount | 20 V | 90 nC | N-Channel | LFPAK56 Power-SO8 | 80 V | 100 A | 4.5 mOhm | MOSFET (Metal Oxide) | -55 °C | 175 ░C | |||
Freescale Semiconductor - NXP | SC-100 SOT-669 | Surface Mount | 20 V | 20.5 nC | N-Channel | LFPAK56 Power-SO8 | 30 V | 84 A | 4.8 mOhm | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 61 W | 4.5 V 10 V | ||
Freescale Semiconductor - NXP | 2683 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount | 20 V | N-Channel | D2PAK | 40 V | 100 A | 4.5 mOhm | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 148 W | 10 V | 42.3 nC | |
Freescale Semiconductor - NXP | 2683 pF | TO-220-3 | Through Hole | 20 V | N-Channel | TO-220AB | 40 V | 100 A | 4.6 mOhm | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 148 W | 10 V | 42.3 nC |