| Transistors | 1 | Obsolete | |
PSMN2R1-30YLEN-channel 30 V, 2.2 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 | Transistors | 1 | Active | N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSonand strong safe operating area, optimized for hot-swap, inrush and linear-mode applications. |
PSMN2R2N-channel 30 V, 2.15 mΩ logic level MOSFET in LFPAK using NextPower technology | Single | 2 | Active | Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. |
PSMN2R2-100SSEN-channel 100 V, 2.3 mOhm ASFET with enhanced SOA in LFPAK88 | Transistors | 1 | Active | N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN2R2-100SSE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip LFPAK88 package. |
PSMN2R2-25YLCN-channel 25 V, 2.4 mΩ logic level MOSFET in LFPAK using NextPower technology | Discrete Semiconductor Products | 1 | Active | Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. |
PSMN2R2-40YSBN-channel 40 V, 2.2 mOhm, 180 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | FETs, MOSFETs | 1 | Active | 180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications. |
PSMN2R2-40YSDN-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | FETs, MOSFETs | 1 | Active | 180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. |
PSMN2R3-100SSEN-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88 | Discrete Semiconductor Products | 1 | Active | N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN2R3-100SSE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip LFPAK88 package. |
PSMN2R3-100SSJN-channel 100 V, 2.3 mOhm ASFET with enhanced dynamic current sharing in LFPAK88 | Discrete Semiconductor Products | 1 | Active | In high-power applications, it is common practice to connect two or more MOSFETs in parallel to provide high current capability. Even when the gates are driven from the same gate driver, it can be challenging to ensure that MOSFETs share the load current equally. |
PSMN2R3-80SSFNextPower 80 V, 2.3 mOhm, 240 Amp, N-channel MOSFET in LFPAK88 package | Transistors | 1 | Active | NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. |
