PSMN2R3-100SSJ Series

N-channel 100 V, 2.3 mOhm ASFET with enhanced dynamic current sharing in LFPAK88

Catalog

N-channel 100 V, 2.3 mOhm ASFET with enhanced dynamic current sharing in LFPAK88

Part	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Power Dissipation (Max)	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
Nexperia USA Inc. PSMN2R3-100SSJJ	20 V	175 °C	-55 °C	100 V	Surface Mount	3 V	10 V	2.3 mOhm	SOT-1235	29960 pF	N-Channel	500 W	LFPAK88 (SOT1235)	MOSFET (Metal Oxide)	255 A	395 nC

Catalog

N-channel 100 V, 2.3 mOhm ASFET with enhanced dynamic current sharing in LFPAK88

Description

In high-power applications, it is common practice to connect two or more MOSFETs in parallel to provide high current capability. Even when the gates are driven from the same gate driver, it can be challenging to ensure that MOSFETs share the load current equally.