PSMN2R2-100SSE Series

N-channel 100 V, 2.3 mOhm ASFET with enhanced SOA in LFPAK88

Catalog

N-channel 100 V, 2.3 mOhm ASFET with enhanced SOA in LFPAK88

Part	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]
Nexperia USA Inc. PSMN2R2-100SSEJ	2.3 mOhm	MOSFET (Metal Oxide)	2.2 V	LFPAK88 (SOT1235)	N-Channel	20 V	420 nC	500 W	175 °C	-55 °C	Surface Mount	100 V	SOT-1235	255 A	10 V	34776 pF

Catalog

N-channel 100 V, 2.3 mOhm ASFET with enhanced SOA in LFPAK88

Description

N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN2R2-100SSE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip LFPAK88 package.