PSMN2R2-40YSB Series

N-channel 40 V, 2.2 mOhm, 180 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology

Catalog

N-channel 40 V, 2.2 mOhm, 180 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology

Part	Current - Continuous Drain (Id) @ 25°C	FET Feature	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Technology	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)
Nexperia USA Inc. PSMN2R2-40YSBX	180 A	Schottky Diode (Body)	SC-100 SOT-669	3.6 V	5173 pF	LFPAK56 Power-SO8	20 V	40 V	N-Channel	69 nC	166 W	MOSFET (Metal Oxide)	2.2 mOhm	Surface Mount	175 °C	-55 °C	10 V

Catalog

N-channel 40 V, 2.2 mOhm, 180 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology

Description

180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications.