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Nexperia USA Inc.

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(5568)

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Part	Category	Description
Nexperia USA Inc. PBSS4350X-QZ	Discrete Semiconductor Products	TRANSISTOR GP BJT NPN 50V 3A 3-PIN SOT-89 T/R
Nexperia USA Inc. PDTD143XT-QR	Discrete Semiconductor Products	PDTD143XT-Q/SOT23/TO-236AB
Nexperia USA Inc. BAV99/DG/B3,235Obsolete	Discrete Semiconductor Products	DIODE ARRAY GEN PURP 100V 215MA
Nexperia USA Inc. 74HCS21PW-Q100J	Integrated Circuits (ICs)	74HCS21PW-Q100/SOT402/TSSOP14
Nexperia USA Inc. PMCB60XNEAYL	Discrete Semiconductor Products	SMALL SIGNAL MOSFET FOR MOBILE
Nexperia USA Inc. LD6836TD/13P,125Obsolete	Integrated Circuits (ICs)	IC REG LINEAR 1.3V 300MA 5-TSOP
Nexperia USA Inc. 74HC688PW,112Obsolete	Integrated Circuits (ICs)	IC ID COMPARATOR 8BIT 20-TSSOP
Nexperia USA Inc. PDZ6.2B-QZ	Discrete Semiconductor Products	DIODE ZENER 6.2V 400MW SOD323
Nexperia USA Inc. BUK4D38-20PH	Discrete Semiconductor Products	SMALL SIGNAL MOSFETS FOR AUTOMOT
Nexperia USA Inc. 74ALVT16373DGG,512Obsolete	Integrated Circuits (ICs)	IC D-TYPE TRANSP 8:8 48-TSSOP

Series	Category	# Parts	Status	Description

PSMN2R6-80YSFNextPower 80 V, 2.4 mOhm, 231 A, N-channel MOSFET in LFPAK56E package	Single FETs, MOSFETs	1	Active	NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications.
PSMN2R7	FETs, MOSFETs	1	Obsolete
PSMN2R7-30BLN-channel 30 V 3.0 mΩ logic level MOSFET in D2PAK	Single FETs, MOSFETs	1	Active	Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
PSMN2R8	Single FETs, MOSFETs	1	Obsolete
PSMN2R8-25MLCN-channel 25 V 2.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology	Transistors	1	Active	Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
PSMN2R8-40YSBN-channel 40 V, 2.8 mOhm, 160 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology	FETs, MOSFETs	1	Active	160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications.
PSMN2R8-40YSDN-channel 40 V, 2.8 mΩ, 160 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology	Discrete Semiconductor Products	1	Active	160 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
PSMN2R8-80BSN-channel 80 V, 3 mΩ standard level FET in D2PAK	FETs, MOSFETs	1	Active	Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
PSMN2R8-80SSFNextPower 80 V, 2.8 mOhm, 205 Amp, N-channel MOSFET in LFPAK88 package	Transistors	1	Active	NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications.
PSMN2R9N-channel 30 V 2.95 mΩ logic level MOSFET in LFPAK33 using NextPower Technology	Discrete Semiconductor Products	2	Active	Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.