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Nexperia USA Inc.
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
Beta
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| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
 Nexperia USA Inc. | Discrete Semiconductor Products | TRANSISTOR GP BJT NPN 50V 3A 3-PIN SOT-89 T/R |
Nexperia USA Inc. | Discrete Semiconductor Products | PDTD143XT-Q/SOT23/TO-236AB |
Nexperia USA Inc. BAV99/DG/B3,235Obsolete | Discrete Semiconductor Products | DIODE ARRAY GEN PURP 100V 215MA |
 Nexperia USA Inc. | Integrated Circuits (ICs) | 74HCS21PW-Q100/SOT402/TSSOP14 |
 Nexperia USA Inc. | Discrete Semiconductor Products | SMALL SIGNAL MOSFET FOR MOBILE |
 Nexperia USA Inc. LD6836TD/13P,125Obsolete | Integrated Circuits (ICs) | IC REG LINEAR 1.3V 300MA 5-TSOP |
 Nexperia USA Inc. 74HC688PW,112Obsolete | Integrated Circuits (ICs) | IC ID COMPARATOR 8BIT 20-TSSOP |
 Nexperia USA Inc. | Discrete Semiconductor Products | DIODE ZENER 6.2V 400MW SOD323 |
 Nexperia USA Inc. | Discrete Semiconductor Products | SMALL SIGNAL MOSFETS FOR AUTOMOT |
 Nexperia USA Inc. 74ALVT16373DGG,512Obsolete | Integrated Circuits (ICs) | IC D-TYPE TRANSP 8:8 48-TSSOP |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
PSMN1R7N-channel 25 V, 1.75 mOhm, 200 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Single | 2 | Active | Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. |
PSMN1R7-40YLBN-channel 40 V, 1.8 mOhm, 200 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | FETs, MOSFETs | 1 | Active | 200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications. |
PSMN1R7-40YLDN-channel 40 V, 1.8 mΩ, 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | FETs, MOSFETs | 1 | Active | 200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. |
PSMN1R7-60BSN-channel 60 V 2 mΩ standard level MOSFET in D2PAK | Single FETs, MOSFETs | 1 | Active | Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. |
| Discrete Semiconductor Products | 2 | Obsolete | ||
PSMN1R8-30MLHN-channel 30 V, 2.1 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology | Single FETs, MOSFETs | 1 | Active | Logic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package. NextPowerS3 technology delivers low RDSon, low IDSSleakage and high efficiency. Rated to 150 A and optimizedwith low gate resistance (RG) for fast-switching applications. |
PSMN1R8-40YLCN-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology | FETs, MOSFETs | 1 | Active | Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. |
PSMN1R8-80SSEN-channel 80 V, 1.9mOhm ASFET with enhanced SOA in LFPAK88 | Transistors | 1 | Active | N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R8-80SSE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip LFPAK88 package. |
PSMN1R8-80SSFNextPower 80 V, 1.8 mOhm, 270 Amp, N-channel MOSFET in LFPAK88 package | Discrete Semiconductor Products | 1 | Active | NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. |
| Single FETs, MOSFETs | 1 | Obsolete | ||
