PSMN2R4-30MLDN-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Discrete Semiconductor Products | 1 | Active | Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The NextPowerS3 portfolio, utilising Nexperia’s unique "SchottkyPlus" technology, delivers high efficiency and the low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like body diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. |
| Discrete Semiconductor Products | 1 | Active | |
| Transistors | 1 | Obsolete | |
PSMN2R5-30YLN-channel 30 V 2.4 mΩ logic level MOSFET in LFPAK | FETs, MOSFETs | 1 | NRND | N-channel 30 V 2.4 mΩ logic level MOSFET in LFPAK |
PSMN2R5-40YLBN-channel 40 V, 2.6 mOhm, 160 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Transistors | 1 | Active | 160 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications. |
PSMN2R5-40YLDN-channel 40 V, 2.6 mΩ, 160 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Single FETs, MOSFETs | 1 | Active | 160 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. |
PSMN2R5-80SSEN-channel 80 V, 2.5 mOhm MOSFET with enhanced SOA in LFPAK88 | FETs, MOSFETs | 1 | Active | N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN2R5-80SSE delivers very low RDSonand enhanced safe operating area performance in a high-reliability copper-clip LFPAK88 package. |
| Transistors | 1 | Active | |
PSMN2R6-100SSFNextPower 100 V, 2.6 mOhm, 200 Amp, N-channel MOSFET in LFPAK88 package | Transistors | 1 | Active | NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. |
PSMN2R6-40YSN-channel LFPAK 40 V 2.8 mΩ standard level MOSFET | Single FETs, MOSFETs | 1 | NRND | N-channel LFPAK 40 V 2.8 mΩ standard level MOSFET |
