PSMN2R2-40YSD Series

N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

Catalog

N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

Part	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Vgs(th) (Max) @ Id
Nexperia USA Inc. PSMN2R2-40YSDX	40 V	MOSFET (Metal Oxide)	175 °C	-55 °C	20 V	N-Channel	10 V	SC-100 SOT-669	LFPAK56 Power-SO8	5130 pF	180 A	63 nC	166 W	2.2 mOhm	Surface Mount	3.6 V

Catalog

N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

Description

180 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.