PSMN2R1-30YLE Series

N-channel 30 V, 2.2 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56

Catalog

N-channel 30 V, 2.2 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56

Part	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Supplier Device Package
Nexperia USA Inc. PSMN2R1-30YLEX	2.2 V	N-Channel	160 A	MOSFET (Metal Oxide)	20 V	64 nC	2.17 mOhm	7 V 10 V	SC-100 SOT-669	3749 pF	30 V	Surface Mount	175 °C	-55 °C	124 W	LFPAK56 Power-SO8

Catalog

N-channel 30 V, 2.2 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56

Description

N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSonand strong safe operating area, optimized for hot-swap, inrush and linear-mode applications.