HMC507VCO SMT with Fo/2, 6.65 - 7.65 GHz | Development Boards, Kits, Programmers | 1 | Active | The HMC507LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC507LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature a half frequency output. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +13.5 dBm typical from a +5V supply. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONSVSAT RadioPoint to Point/Multi-Point RadioTest Equipment & Industrial ControlsMilitary End-Use |
HMC508VCO SMT with Fo/2, 7.3 - 8.2 GHz | VCOs (Voltage Controlled Oscillators) | 1 | Obsolete | The HMC508LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC508LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature a half frequency output. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +15 dBm typical from a +5V supply. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONSVSAT RadioPoint-to-Point/Multi-Point RadioTest Equipment & Industrial ControlsMilitary End-Use |
HMC509VCO SMT with Fo/2, 7.8 - 8.8 GHz | VCOs (Voltage Controlled Oscillators) | 1 | Obsolete | The HMC509LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC509LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature a half frequency output. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +13 dBm typical from a +5V supply. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONSVSAT RadioPoint-to-Point/Multi-Point RadioTest Equipment & Industrial ControlsMilitary End-Use |
| Crystals, Oscillators, Resonators | 2 | Active | |
HMC511VCO SMT with Fo/2, 9.05 - 10.15 GHz | Crystals, Oscillators, Resonators | 3 | Active | The HMC511LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC511LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature a half frequency output. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +13 dBm typical from a +5V supply. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONSVSAT RadioPoint-to-Point/Multi-Point RadioTest Equipment & Industrial ControlsMilitary End-Use |
HMC513VCO SMT with Fo/2 & Divide-by-4, 10.43 - 11.46 GHz | Crystals, Oscillators, Resonators | 3 | Active | The HMC513LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC513LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by- 4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +7 dBm typical from a +3V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5×5 mm surface mount package, and requires no external matching components.APPLICATIONSVSAT RadioPoint-to-Point/Multi-Point RadioTest Equipment & Industrial ControlsMilitary End-Use |
HMC514VCO SMT with Fo/2 & Divide-by-4, 11.17 - 12.02 GHz | VCOs (Voltage Controlled Oscillators) | 1 | Active | The HMC514LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC514LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +7 dBm typical from a +3V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONSVSAT RadioPoint-to-Point/Multi-Point RadioTest Equipment & Industrial ControlsMilitary End-Use |
HMC517LC4Low Noise Amplifier SMT, 17 - 26 GHz | RF, RFID, Wireless Evaluation Boards | 3 | Active | The HMC517LC4 chip is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier (LNA) housed in a leadless "Pb free" RoHS compliant SMT package. The HMC517LC4 provides 19 dB of small signal gain, 2.5 dB of noise figure and has an output IP3 of +23 dBm. The P1dB output power of +13 dBm enables the LNA to also function as a LO driver for balanced, I/Q or image reject mixers. The HMC517LC4 allows the use of surface mount manufacturing techniques.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point Radios & VSATTest Equipment and SensorsMilitary |
| RF Amplifiers | 1 | Active | The HMC518 chip is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier (LNA) which covers the 20 to 32 GHz frequency range. The HMC518 provides 15 dB of small signal gain, 3dB of noise figure and has an output IP3 greater than 23 dBm. The chip can easily be integrated into hybrid or MCM assemblies due to its small size. All data is tested with the chip in a 50 Ohm test fixture connected via 0.075mm (3 mil) ribbon bonds of minimal length 0.31 mm (12 mil). Two 0.025 mm (1 mil) diameter bondwires may also be used to make the RFIN and RFOUT connections.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point Radios & VSATTest Equipment and SensorsMilitary & Space |
HMC519-DieGaAs pHEMT MMIC Low Noise Amplifier Chip, 18 - 32 GHz | Evaluation Boards | 5 | Active | The HMC519LC4 is a high dynamic range GaAs pHEMT MMIC Low Noise Amplifier (LNA) housed in a leadless 4 x 4 mm ceramic surface mount package. The amplifier operates between 18 and 31 GHz, providing 14 dB of small signal gain, 3.5 dB noise figure and output IP3 of +23 dBm, while requiring only 75 mA from a +3V single supply. The P1dB output power of +11 dBm, enables the LNA to function as a LO driver for balanced, I/Q or image reject mixers. The HMC519LC4 also features I/Os that are DC blocked and internally matched to 50 Ohms, making it ideal for microwave radio and VSAT applications.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point Radios & VSATTest Equipment & SensorsMilitary & Space |
