Analog Devices

The HMC520A is a compact gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), in-phase quadrature (I/Q) mixer in a 24-terminal, RoHS compliant, ceramic leadless chip carrier (LCC) package. The device can be used as either an image reject mixer or a single sideband upconverter. The mixer uses two standard double balanced mixer cells and a 90° hybrid fabricated in a GaAs, metal semiconductor field effect transistor (MESFET) process. The HMC520A is a much smaller alternative to a hybrid style image reject mixer and a single sideband upconverter assembly. The HMC520A eliminates the need for wire bonding, allowing the use of surface-mount manufacturing techniques.ApplicationsPoint to point microwave radiosPoint to multipoint radiosVideo satellites (VSATs)Digital radiosInstrumentationAutomatic test equipment (ATE)

The HMC521ALC4 is a compact, gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), inphase quadrature (I/Q) mixer in a RoHS compliant, 24-terminal ceramic leadless chip carrier (LCC) package. This device can be used as either an image reject mixer or a single sideband upconverter. The mixer uses two standard, double balanced mixer cells and a 90° hybrid coupler fabricated in a GaAs, metal semiconductor field effect transistor (MESFET) process. This device is a smaller alternative to hybrid style image reject mixers and single sideband upconverter assemblies. The HMC521ALC4 eliminates the need for wire bonding, allowing use of surface-mount manufacturing techniques.ApplicationsMicrowave and very small aperture terminal (VSAT) radiosTest equipmentMilitary electronic warfare (EW); electronic countermeasure (ECM); and command, control, communications, and intelligence (C3I)

The HMC523 devices are compact I/Q MMIC mixers that are available in a chip (HMC523) or a leadless Pb-free RoHS compliant SMT package (HMC523LC4), both of which can be used as either an IRM or a single sideband (SSB) upconverter. The mixers utilize two standard Hittite double balanced mixer cells and a 90° hybrid fabricated in a GaAs metal semiconductor field effect transistor (MESFET) process. A low frequency quadrature hybrid was used to produce a 100 MHz USB IF output. These products are much smaller alternatives to hybrid style IRMs and SSB upconverter assemblies. All data shown for the HMC523 is taken with the chip mounted in a 50 Ω test fixture and includes the effects of 1 mil diameter × 20 mil length bond wires on each port. The HMC523LC4 eliminates the need for wire bonding allowing use of surface mount manufacturing techniques.ApplicationsPoint-to-pointPoint-to-multipoint radioDigital radioMilitary and military end useVery small aperture terminal (VSAT)Test equipment and sensors

The HMC524 devices are compact I/Q MMIC mixers that are available in a chip (HMC524) or a RoHS compliant SMT package (HMC524LC3B), both of which can be used as either an IRM or a single sideband (SSB) upconverter. The mixers utilize two standard Hittite double balanced mixer cells and a 90° hybrid fabricated in a GaAs metal semiconductor field effect transistor (MESFET) process. A low frequency quadrature hybrid was used to produce a 100 MHz USB IF output. These products are much smaller alternatives to hybrid style IRMs and SSB upconverter assemblies. All data shown for the HMC524 is taken with the chip mounted in a 50 Ω test fixture and includes the effects of 1 mil diameter × 20 mil length bond wires on each port. The HMC524LC3B eliminates the need for wire bonding allowing use of surface mount manufacturing techniques.ApplicationsPoint-to-point radiosPoint-to-multipoint radiosVery small aperture terminal (VSAT)Test equipment and sensorsMilitary end use

The HMC525 devices are compact I/Q MMIC mixers that are available in a chip (HMC525) or a leadless Pb-free RoHS compliant SMT package (HMC525LC4), both of which can be used as either an IRM or a single sideband (SSB) upconverter. The mixers utilize two standard Hittite double-balanced mixer cells and a 90° hybrid fabricated in a GaAs metal semiconductor field effect transistor (MESFET) process. A low frequency quadrature hybrid was used to produce a 100 MHz USB IF output. These products are much smaller alternatives to hybrid style IRMs and SSB upconverter assemblies. All data shown for the HMC525 is taken with the chip mounted in a 50 Ω test fixture and includes the effects of 1 mil diameter × 20 mil length bond wires on each port. The HMC525LC4 eliminates the need for wire bonding allowing use of surface mount manufacturing techniques.ApplicationsPoint-to-pointPoint-to-multi-point radioVery small aperture terminal (VSAT)

The HMC527 devices are compact I/Q MMIC mixers that are available in a chip (HMC527) or a RoHS compliant SMT package (HMC527LC4), both of which can be used as either an IRM or a single sideband (SSB) upconverter. The mixers utilize two standard Hittite double-balanced mixer cells and a 90° hybrid fabricated in a GaAs metal semiconductor field effect transistor (MESFET) process. A low frequency quadrature hybrid was used to produce a 100 MHz USB IF output. These products are much smaller alternatives to hybrid style IRMs and SSB upconverter assemblies. All data shown for the HMC527 is taken with the chip mounted in a 50 Ω test fixture and includes the effects of 1 mil diameter × 20 mil length bond wires on each port. The HMC527LC4 eliminates the need for wire bonding allowing use of surface mount manufacturing techniques.ApplicationsPoint-to-point radiosPoint-to-multipoint radiosVery small aperture terminal (VSAT)Test equipment and sensorsMilitary end use

The HMC528 devices are compact I/Q MMIC mixers that are available in a chip (HMC528) or a RoHS compliant SMT package (HMC528LC4), both of which can be used as either an IRM or a single sideband (SSB) upconverter. The mixers utilize two standard Hittite double-balanced mixer cells and a 90° hybrid fabricated in a GaAs metal semiconductor field effect transistor (MESFET) process. A low frequency quadrature hybrid was used to produce a 100 MHz USB IF output. These products are much smaller alternatives to hybrid style IRMs and SSB upconverter assemblies. All data shown for the HMC528 is taken with the chip mounted in a 50 Ω test fixture and includes the effects of 1 mil diameter × 20 mil length bond wires on each port. The HMC528LC4 eliminates the need for wire bonding allowing use of surface mount manufacturing techniques.ApplicationsPoint-to-point radiosPoint-to-multipoint radiosVery small aperture terminal (VSAT)Test equipment and sensorsMilitary end use

The HMC529LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC529LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +8 dBm typical from a +5V supply voltage. The prescaler function can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5×5 mm surface mount package, and requires no external matching components.APPLICATIONSVSAT RadioPoint-to-Point/Multi-point RadioTest Equipment & Industrial ControlsMilitary End-Use

The HMC530LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC530LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO's phase noise performance is excellent over temperature, shock and process due to the oscillator's monolithic structure. Power output is +11 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.APPLICATIONSPoint-to-Point RadiosPoint-to-Multi-Point RadiosTest Equipment & Industrial ControlsSATCOMMilitary End-Use