Analog Devices

The HMC493LP3(E) is a low noise Divide-by-4 Static Divider utilizing InGaP GaAs HBT technology packaged in leadless 3x3 mm QFN surface mount plastic package. This device operates from DC (with a square wave input) to 18 GHz input frequency from a single +5.0V DC supply. The low additive SSB phase noise of -150 dBc/Hz at 100 kHz offset helps the user maintain excellent system noise performance.APPLICATIONSPoint-to-Point / Multi-Point RadiosVSAT RadiosFiber OpticTest EquipmentMilitary

The HMC494LP3(E) is a low noise Divide-by-8 Static Divider utilizing InGaP GaAs HBT technology packaged in leadless 3×3 mm QFN surface mount plastic package. This device operates from DC (with a square wave input) to 18 GHz input frequency from a single +5V DC supply. The low additive SSB phase noise of -150 dBc/Hz at 100 kHz offset helps the user maintain excellent system noise performance.APPLICATIONSPoint-to-Point / Multi-Point RadiosVSAT RadiosFiber OpticTest EquipmentMilitary

The HMC495LP3(E) is a low noise Wideband Direct Quadrature Modulator RFIC which is ideal for digital modulation applications from 250 - 3800 MHz including; Cellular/3G, Broadband Wireless Access & ISM circuits. Housed in a compact 3x3 mm (LP3) SMT QFN package, the RFIC requires minimal external components & provides a low cost alternative to more complicated double upconversion architectures.The RF output port is single-ended and matched to 50 Ohms with no external components. The LO requires -6 to +6 dBm and can be driven in either differential or single-ended mode while the Baseband inputs will support modulation inputs from DC - 250 MHz typical. This device is optimized for a supply voltage of +3.3V @ 108 mA and will provide stable performance over a +3V to +3.6V range.ApplicationsUMTS, GSM or CDMA BasestationsFixed Wireless or WLLISM Transceivers, 900 & 2400 MHzGMSK, QPSK, QAM, SSB Modulators

The HMC497LP4(E) is a low noise, high linearity Direct Quadrature Modulator RFICs which is ideal for digital modulation applications from 100 - 4000 MHz including; Cellular/3G, Broadband Wireless Access & ISM circuits. Housed in a compact 4x4 mm (LP4) SMT QFN package, the RFIC requires minimal external components & provides a low cost alternative to more complicated double upconversion architectures.The RF output port is single-ended and matched to 50 Ohms with no external components. The LO requires -6 to +6 dBm and can be driven in either differential or single-ended mode while the baseband inputs will support modulation inputs from DC - 700 MHz typical. This device is optimized for a supply voltage of +4.5V to +5.5V and consumes 170 mA @ +5V supply.ApplicationsUMTS, GSM or CDMA BasestationsFixed Wireless or WLLISM Transceivers, 900 & 2400 MHzGMSK, QPSK, QAM, SSB Modulators

The HMC498LC4 is a high dynamic range GaAs PHEMT MMIC Medium Power Amplifier housed in a leadless "Pb free" SMT package. Operating from 17 to 24 GHz, the amplifier provides 22 dB of gain, +26 dBm of saturated power and 23% PAE from a +5V supply voltage. Noise figure is 4 dB while output IP3 is +36 dBm typical enabling the HMC498LC4 to function as a low noise front end as well as a driver amplifier. The RF I/Os are DC blocked and matched to 50 Ohms for ease of use. The HMC498LC4 eliminates the need for wire bonding, allowing use of surface mount manufacturing techniques.ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point Radios & VSATTest Equipment & SensorsMilitary End-Use

The HMC499 is a high dynamic range GaAs PHEMT MMIC Medium Power Amplifier which operates between 21 and 32 GHz. The HMC499 provides 16 dB of gain, and an output power of +24 dBm at 1 dB compression from a +5V supply voltage. The HMC499 amplifier can easily be integrated into Multi-Chip-Modules (MCMs) due to its small size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point RadiosVSATMilitary & Space

The HMC500LP3(E) is a high dynamic range Vector Modulator RFIC which is targeted for RF predistortion and feed-forward cancellation circuits, as well as RF cancellation and beam forming amplitude/phase correction circuits. The I & Q ports of the HMC500LP3(E) can be used to continuously vary the phase and amplitude of RF signals by up to 360 degrees and 40 dB respectively, while supporting a 3 dB modulation bandwidth of 150 MHz. With an input IP3 of +33 dBm and input noise floor of -152 dBm/Hz (at -10 dB maximum gain setting), the input IP3/noise floor ratio is 185 dB.APPLICATIONSWireless Infrastructure HPA & MCPA Error CorrectionPre-Distortion or Feed-Forward LinearizationPCS, GSM and W-CDMA SystemsBeam Forming or RF Cancellation Circuits

The HMC504LC4B is a GaAs MMIC Low Noise Wideband Amplifier housed in a leadless 4×4 mm ceramic surface mount package. The amplifier operates between 14 and 27 GHz, providing up to 19 dB of small signal gain, 2.2 dB noise figure, and output IP3 of +26 dBm, while requiring only 90 mA from a +4V supply. The P1dB output power of up to +17 dBm enables the LNA to function as a LO driver for balanced, I/Q or image reject mixers. The HMC504LC4B also features I/Os that are DC blocked and internally matched to 50 Ω, making it ideal for high capacity microwave radios or VSAT applications. This versatile LNA is also available in die form as the HMC-ALH476.APPLICATIONSThis HMC504LC4B is ideal for:Point-to-Point RadiosPoint-to-Multi-Point RadiosMilitary & SpaceTest Instrumentation

The HMC505LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 6.8 to 7.4 GHz, the VCO’s phase noise performance is excellent over temperature, shock and vibration due to the oscillator’s monolithic structure. Power output is +11 dBm typical from a single supply of +3V @ 80 mA. The voltage controlled oscillator is packaged in a leadless QFN 4x4 mm surface mount package.APPLICATIONSVSAT & Microwave RadioTest Equipment & Industrial ControlsMilitary

The HMC506LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 7.8 to 8.7 GHz, the VCO’s phase noise performance is excellent over temperature, shock and vibration due to the oscillator’s monolithic structure. Power output is +14 dBm typical from a single supply of +3V @ 77 mA. The voltage controlled oscillator is packaged in a leadless QFN 4x4 mm surface mount package.APPLICATIONSVSAT RadioPoint-to-Point/Multi-point RadioTest Equipment & Industrial ControlsMilitary End-Use