DRV8702D-Q1Automotive 47-V half-bridge smart gate driver | Evaluation and Demonstration Boards and Kits | 5 | Active | The DRV870x-Q1 devices are small single H-bridge gate drivers that use four external N-channel MOSFETs targeted to drive a bidirectional brushed-DC motor.
A PH/EN, independent H-Bridge, or PWM interface allows simple interfacing to controller circuits. An internal sense amplifier provides adjustable current control. Integrated Charge-Pump allows for 100% duty cycle support and can be used to drive external reverse battery switch.
Independent Half Bridge mode allows sharing of half bridges to control multiple DC motors sequentially in a cost-efficient way. The gate driver includes circuitry to regulate the winding current using fixed off-time PWM current chopping.
The DRV870x-Q1 devices include Smart Gate Drive technology to remove the need for any external gate components (resistors and Zener diodes) while protecting the external FETs. The Smart Gate Drive architecture optimizes dead time to avoid any shoot-through conditions, provides flexibility in reducing electromagnetic interference (EMI) with programmable slew-rate control and protects against any gate-short conditions. Additionally, active and passive pulldowns are included to prevent any dv/dt gate turn on.
The DRV870x-Q1 devices are small single H-bridge gate drivers that use four external N-channel MOSFETs targeted to drive a bidirectional brushed-DC motor.
A PH/EN, independent H-Bridge, or PWM interface allows simple interfacing to controller circuits. An internal sense amplifier provides adjustable current control. Integrated Charge-Pump allows for 100% duty cycle support and can be used to drive external reverse battery switch.
Independent Half Bridge mode allows sharing of half bridges to control multiple DC motors sequentially in a cost-efficient way. The gate driver includes circuitry to regulate the winding current using fixed off-time PWM current chopping.
The DRV870x-Q1 devices include Smart Gate Drive technology to remove the need for any external gate components (resistors and Zener diodes) while protecting the external FETs. The Smart Gate Drive architecture optimizes dead time to avoid any shoot-through conditions, provides flexibility in reducing electromagnetic interference (EMI) with programmable slew-rate control and protects against any gate-short conditions. Additionally, active and passive pulldowns are included to prevent any dv/dt gate turn on. |
DRV8703D-Q1Automotive 47-V half-bridge smart gate driver with SPI control | Evaluation Boards | 4 | Active | The DRV870x-Q1 devices are small single H-bridge gate drivers that use four external N-channel MOSFETs targeted to drive a bidirectional brushed-DC motor.
A PH/EN, independent H-Bridge, or PWM interface allows simple interfacing to controller circuits. An internal sense amplifier provides adjustable current control. Integrated Charge-Pump allows for 100% duty cycle support and can be used to drive external reverse battery switch.
Independent Half Bridge mode allows sharing of half bridges to control multiple DC motors sequentially in a cost-efficient way. The gate driver includes circuitry to regulate the winding current using fixed off-time PWM current chopping.
The DRV870x-Q1 devices include Smart Gate Drive technology to remove the need for any external gate components (resistors and Zener diodes) while protecting the external FETs. The Smart Gate Drive architecture optimizes dead time to avoid any shoot-through conditions, provides flexibility in reducing electromagnetic interference (EMI) with programmable slew-rate control and protects against any gate-short conditions. Additionally, active and passive pulldowns are included to prevent any dv/dt gate turn on.
The DRV870x-Q1 devices are small single H-bridge gate drivers that use four external N-channel MOSFETs targeted to drive a bidirectional brushed-DC motor.
A PH/EN, independent H-Bridge, or PWM interface allows simple interfacing to controller circuits. An internal sense amplifier provides adjustable current control. Integrated Charge-Pump allows for 100% duty cycle support and can be used to drive external reverse battery switch.
Independent Half Bridge mode allows sharing of half bridges to control multiple DC motors sequentially in a cost-efficient way. The gate driver includes circuitry to regulate the winding current using fixed off-time PWM current chopping.
The DRV870x-Q1 devices include Smart Gate Drive technology to remove the need for any external gate components (resistors and Zener diodes) while protecting the external FETs. The Smart Gate Drive architecture optimizes dead time to avoid any shoot-through conditions, provides flexibility in reducing electromagnetic interference (EMI) with programmable slew-rate control and protects against any gate-short conditions. Additionally, active and passive pulldowns are included to prevent any dv/dt gate turn on. |
DRV870460-V dual H-bridge smart gate driver | Motor Drivers, Controllers | 1 | LTB | The DRV8704 is a dual-brushed motor controller for industrial equipment applications. The device controls external N-channel MOSFETs configured as two H-bridges.
Motor current can be accurately controlled using adaptive blanking time and various current decay modes, including an automatic mixed decay mode.
A simple PWM interface allows easy interfacing to controller circuits. A SPI serial interface is used to program the device operation. Output current (torque), gate drive settings, and decay mode are all programmable through a SPI serial interface.
Internal shutdown functions are provided for overcurrent protection, short-circuit protection, gate driver faults, undervoltage lockout (UVLO), and overtemperature. Fault conditions are indicated by a FAULTn pin, and each fault condition is reported by a dedicated bit through SPI.
The DRV8704 is packaged in a PowerPAD™ 38-pin HTSSOP package with thermal pad (Eco-friendly: RoHS & no Sb/Br).
The DRV8704 is a dual-brushed motor controller for industrial equipment applications. The device controls external N-channel MOSFETs configured as two H-bridges.
Motor current can be accurately controlled using adaptive blanking time and various current decay modes, including an automatic mixed decay mode.
A simple PWM interface allows easy interfacing to controller circuits. A SPI serial interface is used to program the device operation. Output current (torque), gate drive settings, and decay mode are all programmable through a SPI serial interface.
Internal shutdown functions are provided for overcurrent protection, short-circuit protection, gate driver faults, undervoltage lockout (UVLO), and overtemperature. Fault conditions are indicated by a FAULTn pin, and each fault condition is reported by a dedicated bit through SPI.
The DRV8704 is packaged in a PowerPAD™ 38-pin HTSSOP package with thermal pad (Eco-friendly: RoHS & no Sb/Br). |
DRV8706-Q1Automotive 40-V H-bridge smart gate driver with offline diagnostics & inline current sense am | Motor Drivers, Controllers | 2 | Active | The DRV8706-Q1 is a highly integrated H-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive voltages using an integrated doubler charge pump for the high-side and a linear regulator for the low-side.
The device uses a smart gate drive architecture to reduce system cost and improve reliability. The gate driver optimizes dead time to avoid shoot-through conditions, provides control to decreasing electromagnetic interference (EMI) through adjustable gate drive current, and protects against drain to source and gate short conditions with VDSand VGSmonitors.
A wide common mode shunt amplifier provides inline current sensing to continuously measure motor current even during recirculating windows. The amplifier can be used in low-side or high-side sense configurations if inline sensing is not required.
The DRV8706-Q1 provide an array of protection features to ensure robust system operation. These include under and overvoltage monitors for the power supply and charge pump, VDSovercurrent and VGSgate fault monitors for the external MOSFETs, offline open load and short circuit diagnostics, and internal thermal warning and shutdown protection.
The DRV8706-Q1 is a highly integrated H-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive voltages using an integrated doubler charge pump for the high-side and a linear regulator for the low-side.
The device uses a smart gate drive architecture to reduce system cost and improve reliability. The gate driver optimizes dead time to avoid shoot-through conditions, provides control to decreasing electromagnetic interference (EMI) through adjustable gate drive current, and protects against drain to source and gate short conditions with VDSand VGSmonitors.
A wide common mode shunt amplifier provides inline current sensing to continuously measure motor current even during recirculating windows. The amplifier can be used in low-side or high-side sense configurations if inline sensing is not required.
The DRV8706-Q1 provide an array of protection features to ensure robust system operation. These include under and overvoltage monitors for the power supply and charge pump, VDSovercurrent and VGSgate fault monitors for the external MOSFETs, offline open load and short circuit diagnostics, and internal thermal warning and shutdown protection. |
| Motor Drivers, Controllers | 3 | Active | |
DRV8714-Q1Automotive 40-V, four-channel half-bridge smart gate driver with inline current sense amplifier | Development Boards, Kits, Programmers | 4 | Active | The DRV871x-Q1 family of devices are highly integrated, multi-channel gate drivers intended for driving multiple motors or loads. The devices integrate either 4 (DRV8714-Q1) or 8 (DRV8718-Q1) half-bridge gate drivers, driver power supplies, current shunt amplifiers, and protection monitors reducing total system complexity, size, and cost.
A smart gate drive architecture manages dead time to prevent shoot-through, controls slew rate to decrease electromagnetic interference (EMI), and optimizes propagation delay for enhanced performance.
Input modes are provided for independent half-bridge or H-bridge control. Four PWM inputs can be multiplexed between the different drivers in combination with SPI control.
Wide common mode shunt amplifiers provide inline current sensing to continuously measure motor current even during recirculating windows. The amplifier can be used in low-side or high-side sense configurations if inline sensing is not required.
The devices provide an array of protection features to promote robust system operation. These include under and overvoltage monitors, VDS overcurrent and VGS gate fault monitors for the external MOSFETs, offline open load and short circuit diagnostics, and internal thermal warning and shutdown protection.
The DRV871x-Q1 family of devices are highly integrated, multi-channel gate drivers intended for driving multiple motors or loads. The devices integrate either 4 (DRV8714-Q1) or 8 (DRV8718-Q1) half-bridge gate drivers, driver power supplies, current shunt amplifiers, and protection monitors reducing total system complexity, size, and cost.
A smart gate drive architecture manages dead time to prevent shoot-through, controls slew rate to decrease electromagnetic interference (EMI), and optimizes propagation delay for enhanced performance.
Input modes are provided for independent half-bridge or H-bridge control. Four PWM inputs can be multiplexed between the different drivers in combination with SPI control.
Wide common mode shunt amplifiers provide inline current sensing to continuously measure motor current even during recirculating windows. The amplifier can be used in low-side or high-side sense configurations if inline sensing is not required.
The devices provide an array of protection features to promote robust system operation. These include under and overvoltage monitors, VDS overcurrent and VGS gate fault monitors for the external MOSFETs, offline open load and short circuit diagnostics, and internal thermal warning and shutdown protection. |
DRV8718-Q1Automotive 40-V, 8-channel half-bridge smart gate driver with inline current sense amplifier | Evaluation and Demonstration Boards and Kits | 2 | Active | The DRV871x-Q1 family of devices are highly integrated, multi-channel gate drivers intended for driving multiple motors or loads. The devices integrate either 4 (DRV8714-Q1) or 8 (DRV8718-Q1) half-bridge gate drivers, driver power supplies, current shunt amplifiers, and protection monitors reducing total system complexity, size, and cost.
A smart gate drive architecture manages dead time to prevent shoot-through, controls slew rate to decrease electromagnetic interference (EMI), and optimizes propagation delay for enhanced performance.
Input modes are provided for independent half-bridge or H-bridge control. Four PWM inputs can be multiplexed between the different drivers in combination with SPI control.
Wide common mode shunt amplifiers provide inline current sensing to continuously measure motor current even during recirculating windows. The amplifier can be used in low-side or high-side sense configurations if inline sensing is not required.
The devices provide an array of protection features to promote robust system operation. These include under and overvoltage monitors, VDS overcurrent and VGS gate fault monitors for the external MOSFETs, offline open load and short circuit diagnostics, and internal thermal warning and shutdown protection.
The DRV871x-Q1 family of devices are highly integrated, multi-channel gate drivers intended for driving multiple motors or loads. The devices integrate either 4 (DRV8714-Q1) or 8 (DRV8718-Q1) half-bridge gate drivers, driver power supplies, current shunt amplifiers, and protection monitors reducing total system complexity, size, and cost.
A smart gate drive architecture manages dead time to prevent shoot-through, controls slew rate to decrease electromagnetic interference (EMI), and optimizes propagation delay for enhanced performance.
Input modes are provided for independent half-bridge or H-bridge control. Four PWM inputs can be multiplexed between the different drivers in combination with SPI control.
Wide common mode shunt amplifiers provide inline current sensing to continuously measure motor current even during recirculating windows. The amplifier can be used in low-side or high-side sense configurations if inline sensing is not required.
The devices provide an array of protection features to promote robust system operation. These include under and overvoltage monitors, VDS overcurrent and VGS gate fault monitors for the external MOSFETs, offline open load and short circuit diagnostics, and internal thermal warning and shutdown protection. |
| Power Management (PMIC) | 1 | Active | The DRV8770 device provides two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The integrated bootstrap diode and external capacitor generate the correct gate drive voltages for the high-side MOSFETs while the GVDD drives the gates of the low-side MOSFETs. The gate drive architecture supports gate drive currents up to 750-mA source and 1.5-A sink.
The high voltage tolerance of the gate drive pins improves system robustness. The SHx phase pins can tolerate significant negative voltage transients, while the high-side gate driver supply can support higher positive voltage transients (115-V absolute maximum) on the BSTx and GHx pins. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.
The DRV8770 device provides two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The integrated bootstrap diode and external capacitor generate the correct gate drive voltages for the high-side MOSFETs while the GVDD drives the gates of the low-side MOSFETs. The gate drive architecture supports gate drive currents up to 750-mA source and 1.5-A sink.
The high voltage tolerance of the gate drive pins improves system robustness. The SHx phase pins can tolerate significant negative voltage transients, while the high-side gate driver supply can support higher positive voltage transients (115-V absolute maximum) on the BSTx and GHx pins. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout. |
DRV880040-V, 2.8-A brushed DC motor driver | Integrated Circuits (ICs) | 3 | Active | The DRV880x provides a versatile motor driver solution with a variety of capabilities. The device contains a full H-bridge which can be used to drive a brushed DC motor, one winding of a stepper motor, or other devices such as solenoids. A simple PHASE-ENABLE interface allows easy interfacing to controller circuits.
The output stages use N-channel power MOSFETs configured as an H-bridge. The DRV880x is capable of peak output currents up to ±2.8 A and operating voltages up to 36 V. An internal charge pump generates the needed gate drive voltages.
A low-power sleep mode is provided which shuts down internal circuitry to achieve a very low quiescent current draw. This sleep mode can be set using a dedicated nSLEEP pin.
Internal protection functions are provided for undervoltage, charge pump fault, overcurrent, short-to-supply, short-to-ground, and overtemperature. Fault conditions are indicated through the nFAULT pin.
The DRV880x is packaged in a 16-pin WQFN package with PowerPAD™ (Eco-friendly: RoHS & no Sb/Br).
The DRV880x provides a versatile motor driver solution with a variety of capabilities. The device contains a full H-bridge which can be used to drive a brushed DC motor, one winding of a stepper motor, or other devices such as solenoids. A simple PHASE-ENABLE interface allows easy interfacing to controller circuits.
The output stages use N-channel power MOSFETs configured as an H-bridge. The DRV880x is capable of peak output currents up to ±2.8 A and operating voltages up to 36 V. An internal charge pump generates the needed gate drive voltages.
A low-power sleep mode is provided which shuts down internal circuitry to achieve a very low quiescent current draw. This sleep mode can be set using a dedicated nSLEEP pin.
Internal protection functions are provided for undervoltage, charge pump fault, overcurrent, short-to-supply, short-to-ground, and overtemperature. Fault conditions are indicated through the nFAULT pin.
The DRV880x is packaged in a 16-pin WQFN package with PowerPAD™ (Eco-friendly: RoHS & no Sb/Br). |
DRV8801A-Q1Automotive 40-V, 2.8-A H-bridge motor driver with current feedback with wettable flank QFN packag | Integrated Circuits (ICs) | 4 | Active | The DRV8801A-Q1 device provides a versatile motor-driver solution with a full H-bridge driver. The device can drive a brushed DC motor or one winding of a stepper motor, as well as other devices like solenoids. A simple PHASE and ENABLE interface allows easy interfacing to controller circuits.
The output stages use N-channel power MOSFETs configured as an H-bridge. The DRV8801A-Q1 device is capable of peak output currents up to ±2.8 A and operating voltages up to 36 V. An internal charge pump generates required gate drive voltages.
A low-power sleep mode is provided which shuts down internal circuitry to achieve very low quiescent current draw. This sleep mode can be set using a dedicated nSLEEP pin.
Internal protection functions are provided undervoltage lockout, overcurrent protection, short-to-supply protection, short-to-ground protection, overtemperature warning, and overtemperature shutdown. Overcurrent (including short-to-ground and short-to-supply) and overtemperature fault conditions are indicated via an nFAULT pin.
The DRV8801A-Q1 device is packaged in a 16-pin WQFN package with wettable flanks and exposed thermal pad (Eco-friendly: RoHS & no Sb/Br).
The DRV8801A-Q1 device provides a versatile motor-driver solution with a full H-bridge driver. The device can drive a brushed DC motor or one winding of a stepper motor, as well as other devices like solenoids. A simple PHASE and ENABLE interface allows easy interfacing to controller circuits.
The output stages use N-channel power MOSFETs configured as an H-bridge. The DRV8801A-Q1 device is capable of peak output currents up to ±2.8 A and operating voltages up to 36 V. An internal charge pump generates required gate drive voltages.
A low-power sleep mode is provided which shuts down internal circuitry to achieve very low quiescent current draw. This sleep mode can be set using a dedicated nSLEEP pin.
Internal protection functions are provided undervoltage lockout, overcurrent protection, short-to-supply protection, short-to-ground protection, overtemperature warning, and overtemperature shutdown. Overcurrent (including short-to-ground and short-to-supply) and overtemperature fault conditions are indicated via an nFAULT pin.
The DRV8801A-Q1 device is packaged in a 16-pin WQFN package with wettable flanks and exposed thermal pad (Eco-friendly: RoHS & no Sb/Br). |
