DRV8703D-Q1 Series

Automotive 47-V half-bridge smart gate driver with SPI control

Catalog

Automotive 47-V half-bridge smart gate driver with SPI control

Part	Supplied Contents	Function	Type	Utilized IC / Part	Output Configuration	Supplier Device Package	Qualification	Voltage - Supply [Min]	Voltage - Supply [Max]	Mounting Type	Grade	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Motor Type - AC, DC	Interface	Applications	Technology	Contents
Texas Instruments DRV8703D-Q1EVM	Board(s)	Gate Driver	Power Management	DRV8703D-Q1
Texas Instruments DRV8703DQRHBTQ1		Driver - Fully Integrated Control and Power Stage			Half Bridge (2)	32-VQFN (5x5)	AEC-Q100	5.5 V	45 V	Surface Mount Wettable Flank	Automotive	32-VFQFN Exposed Pad	150 °C	-40 °C	Brushed DC	PWM	Brushed DC	Power MOSFET
Texas Instruments DRV8703-Q1EVM	Board(s)	Gate Driver	Power Management	DRV8703-Q1															Board(s)
Texas Instruments DRV8703QRHBTQ1		Driver - Fully Integrated Control and Power Stage			Half Bridge (2)	32-VQFN (5x5)	AEC-Q100	5.5 V	45 V	Surface Mount Wettable Flank	Automotive	32-VFQFN Exposed Pad	150 °C	-40 °C	Brushed DC	PWM	Brushed DC	Power MOSFET

Catalog

Automotive 47-V half-bridge smart gate driver with SPI control

Key Features

• AEC-Q100 Qualified for Automotive ApplicationsDevice Temperature Grade 1: –40°C to +125°C Ambient Operating TemperatureFunctional Safety-CapableDocumentation available to aidDRV8702-Q1DRV8703-Q1functional safety system designSingle H-Bridge Gate DriverDrives Four External N-Channel MOSFETsSupports 100% PWM Duty Cycle5.5 to 45-V Operating Supply-Voltage RangeThree Control-Interface OptionsPH/EN, Independent H-Bridge, and PWMSerial Interface for Configuration (DRV8703-Q1)Smart Gate Drive ArchitectureAdjustable Slew-Rate ControlIndependent Control of Each H-BridgeSupports 1.8-V, 3.3-V, and 5-V logic inputsCurrent-Shunt AmplifierIntegrated PWM Current RegulationLow-Power Sleep ModeProtection FeaturesSupply Undervoltage Lockout (UVLO)Charge-Pump Undervoltage (CPUV) LockoutOvercurrent Protection (OCP)Gate-Driver Fault (GDF)Thermal Shutdown (TSD)Watchdog Timer (DRV8703-Q1)Fault-Condition Output (nFAULT)AEC-Q100 Qualified for Automotive ApplicationsDevice Temperature Grade 1: –40°C to +125°C Ambient Operating TemperatureFunctional Safety-CapableDocumentation available to aidDRV8702-Q1DRV8703-Q1functional safety system designSingle H-Bridge Gate DriverDrives Four External N-Channel MOSFETsSupports 100% PWM Duty Cycle5.5 to 45-V Operating Supply-Voltage RangeThree Control-Interface OptionsPH/EN, Independent H-Bridge, and PWMSerial Interface for Configuration (DRV8703-Q1)Smart Gate Drive ArchitectureAdjustable Slew-Rate ControlIndependent Control of Each H-BridgeSupports 1.8-V, 3.3-V, and 5-V logic inputsCurrent-Shunt AmplifierIntegrated PWM Current RegulationLow-Power Sleep ModeProtection FeaturesSupply Undervoltage Lockout (UVLO)Charge-Pump Undervoltage (CPUV) LockoutOvercurrent Protection (OCP)Gate-Driver Fault (GDF)Thermal Shutdown (TSD)Watchdog Timer (DRV8703-Q1)Fault-Condition Output (nFAULT)

Description

The DRV870x-Q1 devices are small single H-bridge gate drivers that use four external N-channel MOSFETs targeted to drive a bidirectional brushed-DC motor. A PH/EN, independent H-Bridge, or PWM interface allows simple interfacing to controller circuits. An internal sense amplifier provides adjustable current control. Integrated Charge-Pump allows for 100% duty cycle support and can be used to drive external reverse battery switch. Independent Half Bridge mode allows sharing of half bridges to control multiple DC motors sequentially in a cost-efficient way. The gate driver includes circuitry to regulate the winding current using fixed off-time PWM current chopping. The DRV870x-Q1 devices include Smart Gate Drive technology to remove the need for any external gate components (resistors and Zener diodes) while protecting the external FETs. The Smart Gate Drive architecture optimizes dead time to avoid any shoot-through conditions, provides flexibility in reducing electromagnetic interference (EMI) with programmable slew-rate control and protects against any gate-short conditions. Additionally, active and passive pulldowns are included to prevent any dv/dt gate turn on. The DRV870x-Q1 devices are small single H-bridge gate drivers that use four external N-channel MOSFETs targeted to drive a bidirectional brushed-DC motor. A PH/EN, independent H-Bridge, or PWM interface allows simple interfacing to controller circuits. An internal sense amplifier provides adjustable current control. Integrated Charge-Pump allows for 100% duty cycle support and can be used to drive external reverse battery switch. Independent Half Bridge mode allows sharing of half bridges to control multiple DC motors sequentially in a cost-efficient way. The gate driver includes circuitry to regulate the winding current using fixed off-time PWM current chopping. The DRV870x-Q1 devices include Smart Gate Drive technology to remove the need for any external gate components (resistors and Zener diodes) while protecting the external FETs. The Smart Gate Drive architecture optimizes dead time to avoid any shoot-through conditions, provides flexibility in reducing electromagnetic interference (EMI) with programmable slew-rate control and protects against any gate-short conditions. Additionally, active and passive pulldowns are included to prevent any dv/dt gate turn on.