DRV8706-Q1 Series

Automotive 40-V H-bridge smart gate driver with offline diagnostics & inline current sense am

Catalog

Automotive 40-V H-bridge smart gate driver with offline diagnostics & inline current sense am

Part	Function	Supplier Device Package	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Interface	Current - Output	Grade	Motor Type - AC, DC	Output Configuration	Voltage - Supply [Max]	Voltage - Supply [Min]	Applications	Motor Type - Stepper	Qualification	Package / Case	Interface [custom]	Interface [custom]
Texas Instruments DRV8706SQRHBRQ1	Driver - Fully Integrated Control and Power Stage	32-VQFN (5x5)	Surface Mount Wettable Flank	-40 °C	125 °C	NMOS	PWM SPI	5 mA	Automotive	Brushed DC	Pre-Driver - Half Bridge (2)	37 V	4.9 V	Brushed DC	Bipolar	AEC-Q100	32-VFQFN Exposed Pad
Texas Instruments DRV8706HQRHBRQ1	Driver - Fully Integrated Control and Power Stage	32-VQFN (5x5)	Surface Mount Wettable Flank	-40 °C	125 °C	NMOS		5 mA	Automotive	Brushed DC	Pre-Driver - Half Bridge (2)	37 V	4.9 V	Brushed DC	Bipolar	AEC-Q100	32-VFQFN Exposed Pad	HW	Hardwired

Catalog

Automotive 40-V H-bridge smart gate driver with offline diagnostics & inline current sense am

Key Features

• AEC-Q100 qualified for automotive applications:Temperature grade 1: –40°C to +125°C, TAFunctional Safety-CapableDocumentationavailable to aid functional safety system designH-bridge smart gate driver4.9-V to 37-V (40-V abs. max) operating rangeDoubler charge pump for 100% PWMHalf-bridge and H-bridge control modesPin to pin gate driver variantsDRV8106-Q1:Half-bridge with inline amplifierDRV8705-Q1:H-bridge with low-side amplifierSmart gate drive architectureAdjustable slew rate control0.5-mA to 62-mA peak source current output0.5-mA to 62-mA peak sink current outputIntegrated dead-time handshakingWide common mode current shunt amplifierSupports inline, high-side, or low-sideAdjustable gain settings (10, 20, 40, 80 V/V)Integrated feedback resistorsAdjustable PWM blanking schemeMultiple interface options availableSPI: Detailed configuration and diagnosticsH/W: Simplified control and less MCU pinsSpread spectrum clocking for EMI reductionCompact VQFN package with wettable flanksIntegrated protection featuresDedicated driver disable pin (DRVOFF)Supply and regulator voltage monitorsMOSFET VDSovercurrent monitorsMOSFET VGSgate fault monitorsCharge pump for reverse polarity MOSFETOffline open load and short circuit diagnosticsDevice thermal warning and shutdownFault condition interrupt pin (nFAULT)AEC-Q100 qualified for automotive applications:Temperature grade 1: –40°C to +125°C, TAFunctional Safety-CapableDocumentationavailable to aid functional safety system designH-bridge smart gate driver4.9-V to 37-V (40-V abs. max) operating rangeDoubler charge pump for 100% PWMHalf-bridge and H-bridge control modesPin to pin gate driver variantsDRV8106-Q1:Half-bridge with inline amplifierDRV8705-Q1:H-bridge with low-side amplifierSmart gate drive architectureAdjustable slew rate control0.5-mA to 62-mA peak source current output0.5-mA to 62-mA peak sink current outputIntegrated dead-time handshakingWide common mode current shunt amplifierSupports inline, high-side, or low-sideAdjustable gain settings (10, 20, 40, 80 V/V)Integrated feedback resistorsAdjustable PWM blanking schemeMultiple interface options availableSPI: Detailed configuration and diagnosticsH/W: Simplified control and less MCU pinsSpread spectrum clocking for EMI reductionCompact VQFN package with wettable flanksIntegrated protection featuresDedicated driver disable pin (DRVOFF)Supply and regulator voltage monitorsMOSFET VDSovercurrent monitorsMOSFET VGSgate fault monitorsCharge pump for reverse polarity MOSFETOffline open load and short circuit diagnosticsDevice thermal warning and shutdownFault condition interrupt pin (nFAULT)

Description

The DRV8706-Q1 is a highly integrated H-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive voltages using an integrated doubler charge pump for the high-side and a linear regulator for the low-side. The device uses a smart gate drive architecture to reduce system cost and improve reliability. The gate driver optimizes dead time to avoid shoot-through conditions, provides control to decreasing electromagnetic interference (EMI) through adjustable gate drive current, and protects against drain to source and gate short conditions with VDSand VGSmonitors. A wide common mode shunt amplifier provides inline current sensing to continuously measure motor current even during recirculating windows. The amplifier can be used in low-side or high-side sense configurations if inline sensing is not required. The DRV8706-Q1 provide an array of protection features to ensure robust system operation. These include under and overvoltage monitors for the power supply and charge pump, VDSovercurrent and VGSgate fault monitors for the external MOSFETs, offline open load and short circuit diagnostics, and internal thermal warning and shutdown protection. The DRV8706-Q1 is a highly integrated H-bridge gate driver, capable of driving high-side and low-side N-channel power MOSFETs. It generates the proper gate drive voltages using an integrated doubler charge pump for the high-side and a linear regulator for the low-side. The device uses a smart gate drive architecture to reduce system cost and improve reliability. The gate driver optimizes dead time to avoid shoot-through conditions, provides control to decreasing electromagnetic interference (EMI) through adjustable gate drive current, and protects against drain to source and gate short conditions with VDSand VGSmonitors. A wide common mode shunt amplifier provides inline current sensing to continuously measure motor current even during recirculating windows. The amplifier can be used in low-side or high-side sense configurations if inline sensing is not required. The DRV8706-Q1 provide an array of protection features to ensure robust system operation. These include under and overvoltage monitors for the power supply and charge pump, VDSovercurrent and VGSgate fault monitors for the external MOSFETs, offline open load and short circuit diagnostics, and internal thermal warning and shutdown protection.