Texas Instruments

The UCC21520 is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5MHz. The input side is isolated from the two output drivers by a 5.7kVRMS reinforced isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1500VDC. Every driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). A disable pin shuts down both outputs simultaneously when it is set high, and allows normal operation when left open or grounded. As a fail-safe measure, primary-side logic failures force both outputs low. Each device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All supply voltage pins have under voltage lock-out (UVLO) protection. With all these advanced features, the UCC21520 enables high efficiency, high power density, and robustness. Each device accepts VDD supply voltages up to 25 V. A wide input VCCI range from 3 V to 18 V makes the driver suitable for interfacing with both analog and digital controllers. All supply voltage pins have under voltage lock-out (UVLO) protection. With all these advanced features, the UCC21520 and the UCC21520A enable high efficiency, high power density, and robustness in a wide variety of power applications. The UCC21520 is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5MHz. The input side is isolated from the two output drivers by a 5.7kVRMS reinforced isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1500VDC. Every driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). A disable pin shuts down both outputs simultaneously when it is set high, and allows normal operation when left open or grounded. As a fail-safe measure, primary-side logic failures force both outputs low. Each device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All supply voltage pins have under voltage lock-out (UVLO) protection. With all these advanced features, the UCC21520 enables high efficiency, high power density, and robustness. Each device accepts VDD supply voltages up to 25 V. A wide input VCCI range from 3 V to 18 V makes the driver suitable for interfacing with both analog and digital controllers. All supply voltage pins have under voltage lock-out (UVLO) protection. With all these advanced features, the UCC21520 and the UCC21520A enable high efficiency, high power density, and robustness in a wide variety of power applications.

The UCC21521 is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion. The input side is isolated from the two output drivers by a 5.7-kVRMSreinforced isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1500 VDC. Every driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low. The device accepts VDD supply voltages up to 25 V. A wide input VCCI range from 3 V to 18 V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection. With all these advanced features, the UCC21521 enables high efficiency, high power density, and robustness in a wide variety of power applications. The UCC21521 is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion. The input side is isolated from the two output drivers by a 5.7-kVRMSreinforced isolation barrier, with a minimum of 100-V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1500 VDC. Every driver can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low. The device accepts VDD supply voltages up to 25 V. A wide input VCCI range from 3 V to 18 V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection. With all these advanced features, the UCC21521 enables high efficiency, high power density, and robustness in a wide variety of power applications.

The UCC21530-Q1 is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5MHz. The input side is isolated from the two output drivers by a 5.7kVRMS reinforced isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850V. This device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low. The device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection. The UCC21530-Q1 is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5MHz. The input side is isolated from the two output drivers by a 5.7kVRMS reinforced isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850V. This device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low. The device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.

The UCC21540-Q1 device is an isolated dual channel gate driver with programmable dead time and wide temperature range. This device exhibits consistent performance and robustness under extreme temperature conditions. It is designed with 4 A peak-source and 6 A peak-sink current to drive power MOSFET, IGBT, and GaN transistors. The UCC21540-Q1 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5.7-kVRMS isolation barrier, with a minimum of 125-V/ns common-mode transient immunity (CMTI). Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and negative voltage handling for up to –5-V spikes for 50 ns on input pins. All supplies have UVLO protection. The UCC21540-Q1 device is an isolated dual channel gate driver with programmable dead time and wide temperature range. This device exhibits consistent performance and robustness under extreme temperature conditions. It is designed with 4 A peak-source and 6 A peak-sink current to drive power MOSFET, IGBT, and GaN transistors. The UCC21540-Q1 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5.7-kVRMS isolation barrier, with a minimum of 125-V/ns common-mode transient immunity (CMTI). Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and negative voltage handling for up to –5-V spikes for 50 ns on input pins. All supplies have UVLO protection.

The UCC2154x is an isolated dual channel gate driver family designed with up to 4 A/6 A peak source/sink current to drive power MOSFET, IGBT, and GaN transistors. UCC2154x in DWK package also offers 3.3-mm minimum channel-to-channel spacing, which facilitates higher bus voltage. The UCC2154x family can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5.7-kVRMS isolation barrier, with a minimum of 125-V/ns common-mode transient immunity (CMTI). Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and negative voltage handling for up to –5-V spikes for 50 ns on input pins. All supplies have UVLO protection. The UCC2154x is an isolated dual channel gate driver family designed with up to 4 A/6 A peak source/sink current to drive power MOSFET, IGBT, and GaN transistors. UCC2154x in DWK package also offers 3.3-mm minimum channel-to-channel spacing, which facilitates higher bus voltage. The UCC2154x family can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5.7-kVRMS isolation barrier, with a minimum of 125-V/ns common-mode transient immunity (CMTI). Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and negative voltage handling for up to –5-V spikes for 50 ns on input pins. All supplies have UVLO protection.

The UCC2154x is an isolated dual channel gate driver family designed with up to 4 A/6 A peak source/sink current to drive power MOSFET, IGBT, and GaN transistors. UCC2154x in DWK package also offers 3.3-mm minimum channel-to-channel spacing, which facilitates higher bus voltage. The UCC2154x family can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5.7-kVRMS isolation barrier, with a minimum of 125-V/ns common-mode transient immunity (CMTI). Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and negative voltage handling for up to –5-V spikes for 50 ns on input pins. All supplies have UVLO protection. The UCC2154x is an isolated dual channel gate driver family designed with up to 4 A/6 A peak source/sink current to drive power MOSFET, IGBT, and GaN transistors. UCC2154x in DWK package also offers 3.3-mm minimum channel-to-channel spacing, which facilitates higher bus voltage. The UCC2154x family can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5.7-kVRMS isolation barrier, with a minimum of 125-V/ns common-mode transient immunity (CMTI). Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and negative voltage handling for up to –5-V spikes for 50 ns on input pins. All supplies have UVLO protection.

The UCC21550 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, GaN, and IGBT transistors. The UCC21550 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection. With all these advanced features, the UCC21550 device enables high efficiency, high power density, and robustness in a wide variety of power applications. The UCC21550 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, GaN, and IGBT transistors. The UCC21550 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection. With all these advanced features, the UCC21550 device enables high efficiency, high power density, and robustness in a wide variety of power applications.

The UCC21550-Q1 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, GaN, and IGBT transistors. The UCC21550-Q1 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection. With all these advanced features, the UCC21550-Q1 device enables high efficiency, high power density, and robustness in a wide variety of power applications. The UCC21550-Q1 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, GaN, and IGBT transistors. The UCC21550-Q1 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection. With all these advanced features, the UCC21550-Q1 device enables high efficiency, high power density, and robustness in a wide variety of power applications.

The UCC21551x-Q1 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, and IGBT transistors. The UCC21551x-Q1 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). DFJ28 package offers >5.3mm CH-to-CH creepage to support high voltage systems. Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection. With all these advanced features, the UCC21551x-Q1 device enables high efficiency, high power density, and robustness in a wide variety of power applications. The UCC21551x-Q1 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, and IGBT transistors. The UCC21551x-Q1 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). DFJ28 package offers >5.3mm CH-to-CH creepage to support high voltage systems. Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection. With all these advanced features, the UCC21551x-Q1 device enables high efficiency, high power density, and robustness in a wide variety of power applications.