UCC21530-Q1 Series

Automotive, 4A, 6A, 5.7kVRMS, isolated dual-channel gate driver with EN and DT pins for IGBT/SiC

Catalog

Automotive, 4A, 6A, 5.7kVRMS, isolated dual-channel gate driver with EN and DT pins for IGBT/SiC

Part	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case	Package / Case	Package / Case	Qualification	Mounting Type	Driven Configuration	Channel Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Operating Temperature [Min]	Operating Temperature [Max]	Input Type	Number of Drivers	Grade	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Output Supply [Max]	Voltage - Output Supply [Min]	Number of Channels [custom]	Current - Output High, Low	Propagation Delay tpLH / tpHL (Max) [Max]	Pulse Width Distortion (Max) [Max]	Technology	Common Mode Transient Immunity (Min) [Min]	Approval Agency	Voltage - Isolation	Current - Peak Output
Texas Instruments UCC21530QDWKRQ1	6 A	4 A	0.295 in	14-SOIC	7.5 mm	AEC-Q100	Surface Mount	Half-Bridge	Independent	18 V	3 V	1.2 V	1.6 V	-40 °C	130 °C	CMOS/TTL	2	Automotive	7 ns	6 ns
Texas Instruments UCC21530BQDWKRQ1			0.295 in	14-SOIC	7.5 mm	AEC-Q100	Surface Mount							-40 °C	125 °C			Automotive	7 ns	6 ns	25 V	14.7 V	2	4 A 6 A	30 ns	6 ns	Capacitive Coupling	100 V/ns	CQC CSA UL VDE	5700 Vrms	4 A 6 A
Texas Instruments UCC21530DWK	6 A	4 A	0.295 in	14-SOIC	7.5 mm		Surface Mount	Half-Bridge	Independent	18 V	3 V	1.2 V	1.6 V	-40 °C	130 °C	CMOS/TTL	2		7 ns	6 ns
Texas Instruments UCC21530DWKR	6 A	4 A	0.295 in	14-SOIC	7.5 mm		Surface Mount	Half-Bridge	Independent	18 V	3 V	1.2 V	1.6 V	-40 °C	130 °C	CMOS/TTL	2		7 ns	6 ns
Texas Instruments UCC21530QDWKQ1	6 A	4 A	0.295 in	14-SOIC	7.5 mm	AEC-Q100	Surface Mount	Half-Bridge	Independent	18 V	3 V	1.2 V	1.6 V	-40 °C	130 °C	CMOS/TTL	2	Automotive	7 ns	6 ns

Catalog

Automotive, 4A, 6A, 5.7kVRMS, isolated dual-channel gate driver with EN and DT pins for IGBT/SiC

Key Features

• Universal: dual low-side, dual high-side or half-bridge driverWide body SOIC-14 (DWK) package3.3mm spacing between driver channelsSwitching parameters:33ns typical propagation delay20ns minimum pulse width6ns maximum pulse-width distortionCommon-mode transient immunity (CMTI) greater than 125V/ns4A peak source, 6A peak sink outputTTL and CMOS compatible inputs3V to 18V input VCCI rangeUp to 25V VDD output drive supplyProgrammable overlap and dead timeJunction temperature range –40 to +150°CSafety-related certifications (planned):8000VPK reinforced Isolation per DIN EN IEC 60747-17 (VDE 0884-17)5.7kVRMS isolation for 1 minute per UL 1577CQC certification per GB4943.1-2022Universal: dual low-side, dual high-side or half-bridge driverWide body SOIC-14 (DWK) package3.3mm spacing between driver channelsSwitching parameters:33ns typical propagation delay20ns minimum pulse width6ns maximum pulse-width distortionCommon-mode transient immunity (CMTI) greater than 125V/ns4A peak source, 6A peak sink outputTTL and CMOS compatible inputs3V to 18V input VCCI rangeUp to 25V VDD output drive supplyProgrammable overlap and dead timeJunction temperature range –40 to +150°CSafety-related certifications (planned):8000VPK reinforced Isolation per DIN EN IEC 60747-17 (VDE 0884-17)5.7kVRMS isolation for 1 minute per UL 1577CQC certification per GB4943.1-2022

Description

The UCC21530-Q1 is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5MHz. The input side is isolated from the two output drivers by a 5.7kVRMS reinforced isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850V. This device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low. The device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection. The UCC21530-Q1 is an isolated dual-channel gate driver with 4A source and 6A sink peak current. It is designed to drive IGBTs, Si MOSFETs, and SiC MOSFETs up to 5MHz. The input side is isolated from the two output drivers by a 5.7kVRMS reinforced isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Internal functional isolation between the two secondary-side drivers allows a working voltage of up to 1850V. This device can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver with programmable dead time (DT). The EN pin pulled low shuts down both outputs simultaneously and allows for normal operation when left open or pulled high. As a fail-safe measure, primary-side logic failures force both outputs low. The device accepts VDD supply voltages up to 25V. A wide input VCCI range from 3V to 18V makes the driver suitable for interfacing with both analog and digital controllers. All the supply voltage pins have under voltage lock-out (UVLO) protection.