UCC21550-Q1 Series

Automotive, 4A/6A, 5-kVRMS dual-channel isolated gate driver with DIS and DT pins for IGBT

Catalog

Automotive, 4A/6A, 5-kVRMS dual-channel isolated gate driver with DIS and DT pins for IGBT

Part	Current - Peak Output	Propagation Delay tpLH / tpHL (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Common Mode Transient Immunity (Min) [Min]	Technology	Voltage - Output Supply [Min]	Voltage - Output Supply [Max]	Current - Output High, Low [custom]	Current - Output High, Low [custom]	Supplier Device Package	Pulse Width Distortion (Max) [Max]	Qualification	Number of Channels [custom]	Rise / Fall Time (Typ)	Mounting Type	Approval Agency	Grade	Package / Case	Package / Case	Package / Case	Number of Channels	Package / Case [x]	Package / Case [custom]
Texas Instruments UCC21550BQDWRQ1	4 A 6 A	45 ns	-40 C	150 °C	125 V/ns	Capacitive Coupling	9.2 V	25 V	6 A	4 A	16-SOIC	5 ns	AEC-Q100	1	8 ns	Surface Mount	IEC/EN/DIN UL VDE	Automotive	16-SOIC	7.5 mm	0.295 "
Texas Instruments UCC21550BQDWKRQ1	4 A 6 A	45 ns	-40 C	150 °C	125 V/ns	Capacitive Coupling	9.2 V	25 V	6 A	4 A		5 ns	AEC-Q100		8 ns	Surface Mount	UL VDE	Automotive	14-SOIC			2	0.295 in	7.5 mm
Texas Instruments UCC21550AQDWRQ1	4 A 6 A	45 ns	-40 C	150 °C	125 V/ns	Capacitive Coupling	6.5 V	25 V	6 A	4 A	16-SOIC	5 ns	AEC-Q100		8 ns	Surface Mount	CQC CSA UL VDE	Automotive	16-SOIC	7.5 mm	0.295 "	2
Texas Instruments UCC21550CQDWKRQ1	4 A 6 A	45 ns	-40 C	150 °C	125 V/ns	Capacitive Coupling	13.5 V	25 V	6 A	4 A		5 ns	AEC-Q100		8 ns	Surface Mount	UL VDE	Automotive	14-SOIC			2	0.295 in	7.5 mm
Texas Instruments UCC21550AQDWKRQ1	4 A 6 A	45 ns	-40 C	150 °C	125 V/ns	Capacitive Coupling	6.5 V	25 V	6 A	4 A		5 ns	AEC-Q100		8 ns	Surface Mount	UL VDE	Automotive	14-SOIC			2	0.295 in	7.5 mm

Catalog

Automotive, 4A/6A, 5-kVRMS dual-channel isolated gate driver with DIS and DT pins for IGBT

Description

The UCC21550-Q1 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, GaN, and IGBT transistors. The UCC21550-Q1 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection. With all these advanced features, the UCC21550-Q1 device enables high efficiency, high power density, and robustness in a wide variety of power applications. The UCC21550-Q1 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, GaN, and IGBT transistors. The UCC21550-Q1 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI). Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection. With all these advanced features, the UCC21550-Q1 device enables high efficiency, high power density, and robustness in a wide variety of power applications.