Beta
SemiQ is a US-based manufacturer of high-quality silicon carbide (SiC) power semiconductors, offering MOSFETs, diodes, and epitaxial wafers for high-voltage applications in EV charging, solar, and energy storage.
Parts that are not part of a series
Company background and product focus
SemiQ, headquartered in Lake Forest, California, specializes in providing high-quality, efficient standard and custom Silicon Carbide (SiC) Power Semiconductors for high-voltage applications. The privately held, partially employee-owned company began developing SiC technologies in 2012 and has built over a decade of expertise in wide bandgap semiconductors.
SemiQ designs, develops, and manufactures a comprehensive portfolio of SiC power devices:
SemiQ's experienced team works with customers across diverse application areas including EV charging systems, solar inverters, induction heating, power supplies, fuel cell power generation, and energy storage. Their products combine high-performance characteristics with industry-leading reliability, enabling next-generation power conversion systems with superior efficiency.
© 2026 Zenode. All rights reserved.
Product families from SemiQ
| Series | Category | Parts | Status | Description |
|---|---|---|---|---|
| Series | Category | Parts | Status | Description |
|---|---|---|---|---|
| Single FETs, MOSFETs | 1 | Active | ||
| Transistors | 1 | Active | ||
| Single FETs, MOSFETs | 1 | Active | ||
| FETs, MOSFETs | 1 | Active | ||
| FETs, MOSFETs | 1 | Active | ||
| Single FETs, MOSFETs | 1 | Active | ||
| Diode Arrays | 1 | Active | ||
| Rectifiers | 4 | Active | ||
| Rectifiers | 1 | Active | ||
| Diode Arrays | 3 | Active |
Parts from SemiQ that are not part of a series
| Part Information | Pricing (lowest) | Package Name | Gate Charge (Max) | Technology | Input Capacitance (Ciss) (Max) | FET Type | Current - Continuous Drain (Id) (Tc) | Operating Temperature (Min) | Operating Temperature (Max) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) | Power Dissipation (Max) | FET Feature | Drain to Source Voltage (Vdss) | Vgs(th) (Max) | Package / Case | Mounting Type | Vgs (Max) Negative | Vgs (Max) Positive | Channel Count | Configuration - Features | Configuration | Power - Max (Tc) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 SemiQ GEN3 1200V 7M SIC MOSFET & SBD | Sign in to see pricing | SOT-227 | 505 nC | SiCFET (Silicon Carbide) | 13094 pF | N-Channel | 189 A, 189 A | -55 °C | 175 °C | 18 V | 11 mOhm | 536 W | Schottky Diode (Body) | 1200 V | 4 V | miniBLOC, SOT-227-4 | Chassis Mount | -8 V | 22 V | — | — | — | — |
SemiQ GEN3 1200V 8M SIC MOSFET & SBD | Sign in to see pricing | SOT-227 | 506 nC | SiCFET (Silicon Carbide) | 14085 pF | N-Channel | 189 A, 189 A | -55 °C | 175 °C | 18 V | 12 mOhm | 536 W | — | 1200 V | 4 V | miniBLOC, SOT-227-4 | Chassis Mount | -8 V | 22 V | — | — | — | — |
SemiQ 1700V, 15M SIC MOSFET MODULE, SO | Sign in to see pricing | SOT-227 | 416 nC | SiCFET (Silicon Carbide) | 10878 pF | N-Channel | 204 A | -55 °C | 175 °C | 20 V | 14 mOhm | 652 W | — | 1200 V | 4 V | miniBLOC, SOT-227-4 | Chassis Mount | -10 V | 25 V | — | — | — | — |
SemiQ GEN3 1200V 14M SIC MOSFET & SBD | Sign in to see pricing | SOT-227 | 259 nC | SiCFET (Silicon Carbide) | 6331 pF | N-Channel | 103 A | -55 °C | 175 °C | 18 V | 21 mOhm | 303 W | Schottky Diode (Body) | 1200 V | 4 V | miniBLOC, SOT-227-4 | Chassis Mount | -8 V | 22 V | — | — | — | — |
SemiQ GEN3 1200V 16M SIC MOSFET & SBD | Sign in to see pricing | SOT-227 | 249 nC | SiCFET (Silicon Carbide) | 6796 pF | N-Channel | 103 A | -55 °C | 175 °C | 18 V | 23 mOhm | 303 W | — | 1200 V | 4 V | miniBLOC, SOT-227-4 | Chassis Mount | -8 V | 22 V | — | — | — | — |
SemiQ GEN3 1200V 34M SIC MOSFET & SBD | Sign in to see pricing | SOT-227 | 115 nC | SiCFET (Silicon Carbide) | 2609 pF | N-Channel | 53 A | -55 °C | 175 °C | 18 V | 41 mOhm | 183 W | Schottky Diode (Body) | 1200 V | 4 V | miniBLOC, SOT-227-4 | Chassis Mount | -8 V | 22 V | — | — | — | — |
SemiQ GEN3 1200V 40M SIC MOSFET & SBD | Sign in to see pricing | SOT-227 | 108 nC | SiCFET (Silicon Carbide) | 2745 pF | N-Channel | 53 A | -55 °C | 175 °C | 18 V | 52 mOhm | 183 W | — | 1200 V | 4 V | miniBLOC, SOT-227-4 | Chassis Mount | -8 V | 22 V | — | — | — | — |
SemiQ GEN3 1200V 80M SIC MOSFET & SBD | Sign in to see pricing | SOT-227 | 57 nC | SiCFET (Silicon Carbide) | 1332 pF | N-Channel | 28 A | -55 °C | 175 °C | 18 V | 100 mOhm | 118 W | — | 1200 V | 4 V | miniBLOC, SOT-227-4 | Chassis Mount | -8 V | 22 V | — | — | — | — |
 SemiQ 1200V, 3M SIC MOSFET HALF BRIDGE | Sign in to see pricing | — | 1408 nC | Silicon Carbide (SiC) | 41400 pF | — | 625 A | -40 °C | 175 °C | — | 5.5 mOhm | — | — | 1200 V | 4 V | Module | Chassis Mount | — | — | 2 | Half Bridge | N-Channel | 2.113 kW |
 SemiQ 1200V 3M SIC HALF BRIDGE 62MM MO | Sign in to see pricing | — | 1326 nC | Silicon Carbide (SiC) | 37200 pF | — | 529 A | -40 °C | 175 °C | — | 6 mOhm | — | — | 1200 V | 4 V | Module | Chassis Mount | — | — | 2 | Half Bridge | N-Channel | 1.546 kW |