Technical Specifications
Parameters and characteristics for this part
| Specification | GCMS080C120S1-E1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 28 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 57 nC |
| Input Capacitance (Ciss) (Max) | 1332 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Package Name | SOT-227 |
| Power Dissipation (Max) | 118 W |
| Rds On (Max) | 100 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -8 V |
| Vgs (Max) Positive | 22 V |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 23.92 | <4d |
| 10 | $ 17.25 | |||
| 100 | $ 13.48 | |||
| 500 | $ 13.03 | |||
CAD
3D models and CAD resources for this part
Description
General part information
GCMS080C120S1-E1
GEN3 1200V 80M SIC MOSFET & SBD
Documents
Technical documentation and resources