Technical Specifications
Parameters and characteristics for this part
| Specification | GCMS010B120S1-E1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 204 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 416 nC |
| Input Capacitance (Ciss) (Max) | 10878 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Package Name | SOT-227 |
| Power Dissipation (Max) | 652 W |
| Rds On (Max) | 14 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -10 V |
| Vgs (Max) Positive | 25 V |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 58.74 | <4d |
| 10 | $ 44.66 | |||
| 100 | $ 40.00 | |||
CAD
3D models and CAD resources for this part
Description
General part information
GCMS010B120S1-E1
1700V, 15M SIC MOSFET MODULE, SO
Documents
Technical documentation and resources