Technical Specifications
Parameters and characteristics for this part
| Specification | GCMX003A120S3B1-N |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Half Bridge |
| Current - Continuous Drain (Id) (Tc) | 625 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Max) | 1408 nC |
| Input Capacitance (Ciss) (Max) | 41400 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | Module |
| Power - Max (Tc) | 2.113 kW |
| Rds On (Max) | 5.5 mOhm |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Box | 1 | $ 255.44 | <4d |
| 15 | $ 229.95 | |||
CAD
3D models and CAD resources for this part
Description
General part information
GCMX003A120S3B1-N
1200V, 3M SIC MOSFET HALF BRIDGE
Documents
Technical documentation and resources