Deep-Dive with AI
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DocumentsGCMS007C120S1-E1 | Datasheet
Deep-Dive with AI
DocumentsGCMS007C120S1-E1 | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | GCMS007C120S1-E1 |
|---|---|
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Feature | Schottky Diode (Body) |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 505 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 13094 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Power Dissipation (Max) | 536 W |
| Rds On (Max) @ Id, Vgs | 11 mOhm |
| Supplier Device Package | SOT-227 |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 41.14 | |
Description
General part information
GCMS007C120S1-E1
GEN3 1200V 7M SIC MOSFET & SBD
Documents
Technical documentation and resources