GHXS030 Series
Manufacturer: SemiQ
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DIODE MOD SIC 1200V 30A SOT227
| Part | Current - Reverse Leakage | Package Name | Diode Count | Diode Configuration | Technology | Voltage - Forward (Vf) (Max) | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Mounting Type | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Package / Case | Operating Temperature (Min) | Operating Temperature (Max) | Voltage - Peak Reverse (Max) | Diode Type | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 SemiQ | 200 µA | SOT-227 | 2 | Independent | SiC (Silicon Carbide) Schottky | 1.7 V | 1200 V | 30 A | Chassis Mount | 175 °C | -55 °C | 500 mA | No Recovery Time | 500 mA 500 mA | miniBLOC SOT-227-4 | |||||
SemiQ | 100 µA | SOT-227 | Silicon Carbide Schottky | 1.7 V | Chassis Mount | miniBLOC SOT-227-4 | -55 °C | 175 °C | 600 V | Single Phase | 30 A | |||||||||
SemiQ | 200 µA | SOT-227 | Silicon Carbide Schottky | 1.7 V | Chassis Mount | miniBLOC SOT-227-4 | -55 °C | 175 °C | 1200 V | Single Phase | 30 A | |||||||||
 SemiQ | 200 µA | SOT-227 | Silicon Carbide Schottky | 1.7 V | Chassis Mount | miniBLOC SOT-227-4 | -55 °C | 175 °C | 1200 V | Single Phase | 30 A |