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GCMX003A120S7B1
Discrete Semiconductor Products

GCMX003A120S7B1

Active
SemiQ

1200V 3M SIC HALF BRIDGE 62MM MO

GCMX003A120S7B1
Discrete Semiconductor Products

GCMX003A120S7B1

Active
SemiQ

1200V 3M SIC HALF BRIDGE 62MM MO

Technical Specifications

Parameters and characteristics for this part

SpecificationGCMX003A120S7B1
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesHalf Bridge
Current - Continuous Drain (Id) (Tc)529 A
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Max)1326 nC
Input Capacitance (Ciss) (Max)37200 pF
Mounting TypeChassis Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-40 °C
Package / CaseModule
Power - Max (Tc)1.546 kW
Rds On (Max)6 mOhm
TechnologySilicon Carbide (SiC)
Vgs(th) (Max)4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyTray 1$ 244.64<4d
10$ 236.55

CAD

3D models and CAD resources for this part

Description

General part information

GCMX003A120S7B1

1200V 3M SIC HALF BRIDGE 62MM MO

Documents

Technical documentation and resources