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Product families from Quest Semi
| Series | Category | Parts | Status | Description |
|---|---|---|---|---|
Parts that are not part of a series
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Parts from Quest Semi that are not part of a series
| Part Information | Pricing (lowest) | Grade | Technology | Rds On (Max) | Current - Continuous Drain (Id) | Operating Temperature (Max) | Operating Temperature (Min) | Gate Charge (Max) | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Vgs(th) (Max) | Mounting Type | Vgs (Max) Negative | Vgs (Max) Positive | Package / Case | FET Type | Package Name | Input Capacitance (Ciss) (Max) | Drain to Source Voltage (Vdss) | Package Leads | Current - Continuous Drain (Id) (Tc) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Current - Reverse Leakage | Current - Average Rectified (Io) | Capacitance | Voltage - Forward (Vf) (Max) | Reverse Recovery Time (trr) | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Voltage - DC Reverse (Vr) (Max) | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Quest Semi 1200V 36AMP SIC MOSFET | Sign in to see pricing | Automotive | SiCFET (Silicon Carbide) | 100 mOhm | 36 A | 175 °C | -55 °C | 60 nC | 2.8 V | 198 W | 3.8 V | Through Hole | -10 V | 25 V | TO-247-3 | N-Channel | PG-TO247-3 | 1001 pF | 1200 V | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
 Quest Semi 1200V N-CHANNEL SIC MOSFET 80 M | Sign in to see pricing | — | SiCFET (Silicon Carbide) | 100 mOhm | — | 175 °C | -55 °C | 60 nC, 60 nC | 20 V | 250 W | 3.8 V | Surface Mount | -10 V | 25 V | — | N-Channel | D2PAK, D2PAK-7L | 1001 pF | 1200 V | 7 Leads | 40 A | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
 Quest Semi 1700V 8AMP SIC MOSFET | Sign in to see pricing | Automotive | SiCFET (Silicon Carbide) | 100 mOhm | 8 A | 175 °C | -55 °C | 16 nC | 20 V | 88 W | 4 V | Through Hole | — | — | TO-247-3 | N-Channel | PG-TO247-3 | 142 pF | 1700 V | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
 Quest Semi 650V 65AMP SIC MOSFET D2PAK | Sign in to see pricing | — | SiCFET (Silicon Carbide) | 70 mOhm | — | 175 °C | -55 °C | 105 nC, 105 nC | — | 294 W | 5 V | Surface Mount | -10 V | 25 V | — | N-Channel | D2PAK, D2PAK-7L | 1946 pF | 650 V | 7 Leads | 65 A | 20 V | 18 V | — | — | — | — | — | — | — | — | — | — | — | — |
 Quest Semi SIC SCHOTTKY DIODE 5000V 10A SOT | Sign in to see pricing | — | SiC (Silicon Carbide) Schottky | — | — | — | — | — | — | — | — | Through Hole | — | — | TO-247-2 | — | TO-247-2 | — | — | — | — | — | — | 600 µA | 33 A | 3880 pF | 1.9 V | 0 ns | 175 °C | -55 °C | 500 mA | No Recovery Time | 500 mA, 500 mA | 5000 V | — |
 Quest Semi 1200V 10AMP SIC SCHOTTKY BARRIER | Sign in to see pricing | — | SiC (Silicon Carbide) Schottky | — | — | — | — | — | — | — | — | Through Hole | — | — | TO-220-2 | — | TO-220-2 | — | — | — | — | — | — | 250 µA | 10 A | 770 pF | 1.8 V | 0 ns | 175 °C | -55 °C | 500 mA | No Recovery Time | 500 mA, 500 mA | 1200 V | — |
 Quest Semi SIC HOMOGENEOUS SCHOTTKY BARRIER | Sign in to see pricing | — | SiC (Silicon Carbide) Schottky | — | — | — | — | — | — | — | — | Through Hole | — | — | TO-247-3 | — | TO-247-3L | — | — | — | — | — | — | 30 µA | — | — | 1.6 V | 0 ns | 175 °C | -55 °C | 500 mA | No Recovery Time | 500 mA, 500 mA | 650 V | — |
 Quest Semi 20AMP 650V HOMOGENEOUS SILICON C | Sign in to see pricing | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
 Quest Semi DIODE SIL CARB 1700V 94A TO2472 | Sign in to see pricing | — | SiC (Silicon Carbide) Schottky | — | — | — | — | — | — | — | — | Through Hole | — | — | TO-247-2 | — | TO-247-2 | — | — | — | — | — | — | 10 µA | 25 A | 2822 pF | 1.9 V | 0 ns | 175 °C | -55 °C | 500 mA | No Recovery Time | 500 mA, 500 mA | 1700 V | — |
 Quest Semi 50AMP 1200V SIC HOMOGENEOUS SCHO | Sign in to see pricing | Automotive | SiC (Silicon Carbide) Schottky | — | — | — | — | — | — | — | — | Through Hole | — | — | TO-220-2 | — | TO-220-2L | — | — | — | — | — | — | 40 µA | 50 A | 2380000 pF | 1.7 V | 0 ns | 175 °C | -55 °C | 500 mA | No Recovery Time | 500 mA, 500 mA | 1200 V | AEC-Q101 |